Inspired by nature, we investigate the short-range order effect on the physical properties of amorphous materials. Amorphous Al2O3 thin films exhibit a higher proportion of their 4-coordinated Al sites close to the surface, causing variations in the average short-range order of the film. Below some thickness, the density of these films changes with size. In this work, we address the short-range order effect, through the thickness, on the electronic and optical properties of atomic layer deposited Al2O3 thin films. Both the refractive index and the permittivity were found to vary with size. The refractive index increased with thickness, and for thick films (∼50 nm), it was comparable to that of bulk amorphous Al2O3. The permittivity values increased with thickness as well, but did not reach those of the bulk material. Our experimental design circumvents the unpredictable Al2O3–Si interface, allowing new insights into the permittivity–thickness relations. By combining this design with accurate thickness and density measurements, we systematically correlate the refractive index and permittivity with the density and short-range order. These results shed light on the size effects in thin amorphous oxides and may guide the design of electronic and optical components and devices.
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14 May 2019
Research Article|
May 10 2019
Thickness dependence of the physical properties of atomic-layer deposited Al2O3 Available to Purchase
Yael Etinger-Geller
;
Yael Etinger-Geller
1
Department of Materials Science and Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
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Ekaterina Zoubenko
;
Ekaterina Zoubenko
1
Department of Materials Science and Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
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Maria Baskin;
Maria Baskin
2
Andrew and Erna Viterbi Faculty of Electrical Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
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Lior Kornblum
;
Lior Kornblum
a)
2
Andrew and Erna Viterbi Faculty of Electrical Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
3
Russell Berrie Nanotechnology Institute, Technion—Israel Institute of Technology
, Haifa 32000, Israel
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Boaz Pokroy
Boaz Pokroy
a)
1
Department of Materials Science and Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
3
Russell Berrie Nanotechnology Institute, Technion—Israel Institute of Technology
, Haifa 32000, Israel
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Yael Etinger-Geller
1
Ekaterina Zoubenko
1
Maria Baskin
2
Lior Kornblum
2,3,a)
Boaz Pokroy
1,3,a)
1
Department of Materials Science and Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
2
Andrew and Erna Viterbi Faculty of Electrical Engineering, Technion—Israel Institute of Technology
, Haifa 32000, Israel
3
Russell Berrie Nanotechnology Institute, Technion—Israel Institute of Technology
, Haifa 32000, Israel
J. Appl. Phys. 125, 185302 (2019)
Article history
Received:
November 05 2018
Accepted:
April 22 2019
Citation
Yael Etinger-Geller, Ekaterina Zoubenko, Maria Baskin, Lior Kornblum, Boaz Pokroy; Thickness dependence of the physical properties of atomic-layer deposited Al2O3. J. Appl. Phys. 14 May 2019; 125 (18): 185302. https://doi.org/10.1063/1.5079987
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