Vacancy-type defects in GaN nanowires (NWs) and the trapping of electrons by the vacancies were studied by positron annihilation. Undoped, Si-, and Mg-doped GaN NWs were grown on Si substrates by plasma-assisted molecular beam epitaxy. The major species of vacancies in the undoped and Si-doped samples was identified as a complex between a Ga vacancy and impurities such as oxygen and hydrogen. For the Mg-doped samples, the trapping rate of positrons for such defects decreased with the increase in Mg concentration because of the downward shift of Fermi level position and a resultant shift of the vacancy charge states from neutral (negative) to positive. Under the illumination of a 325-nm He-Cd laser, positrons were found to be trapped by vacancy-type defects, which was attributed to the trapping of excited electrons by these defects.
Skip Nav Destination
Article navigation
7 May 2019
Research Article|
May 03 2019
Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam
Akira Uedono
;
Akira Uedono
a)
1
Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba
, Tsukuba, Ibaraki 305-8573, Japan
Search for other works by this author on:
Alexandra-Madalina Siladie
;
Alexandra-Madalina Siladie
2Université Grenoble Alpes,
CEA, INAC-PHELIQS “Nanophysics and Semiconductors” Group
, 38000 Grenoble, France
Search for other works by this author on:
Julien Pernot
;
Julien Pernot
3
Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel
, 38000 Grenoble, France
Search for other works by this author on:
Bruno Daudin
;
Bruno Daudin
2Université Grenoble Alpes,
CEA, INAC-PHELIQS “Nanophysics and Semiconductors” Group
, 38000 Grenoble, France
Search for other works by this author on:
Shoji Ishibashi
Shoji Ishibashi
4
Research Center for Computational Design of Advanced Functional Materials (CD-FMat), National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8568, Japan
Search for other works by this author on:
J. Appl. Phys. 125, 175705 (2019)
Article history
Received:
January 12 2019
Accepted:
April 16 2019
Citation
Akira Uedono, Alexandra-Madalina Siladie, Julien Pernot, Bruno Daudin, Shoji Ishibashi; Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam. J. Appl. Phys. 7 May 2019; 125 (17): 175705. https://doi.org/10.1063/1.5088653
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00