Vacancy-type defects in GaN nanowires (NWs) and the trapping of electrons by the vacancies were studied by positron annihilation. Undoped, Si-, and Mg-doped GaN NWs were grown on Si substrates by plasma-assisted molecular beam epitaxy. The major species of vacancies in the undoped and Si-doped samples was identified as a complex between a Ga vacancy and impurities such as oxygen and hydrogen. For the Mg-doped samples, the trapping rate of positrons for such defects decreased with the increase in Mg concentration because of the downward shift of Fermi level position and a resultant shift of the vacancy charge states from neutral (negative) to positive. Under the illumination of a 325-nm He-Cd laser, positrons were found to be trapped by vacancy-type defects, which was attributed to the trapping of excited electrons by these defects.
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7 May 2019
Research Article|
May 03 2019
Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam Available to Purchase
Akira Uedono
;
Akira Uedono
a)
1
Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba
, Tsukuba, Ibaraki 305-8573, Japan
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Alexandra-Madalina Siladie
;
Alexandra-Madalina Siladie
2Université Grenoble Alpes,
CEA, INAC-PHELIQS “Nanophysics and Semiconductors” Group
, 38000 Grenoble, France
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Julien Pernot
;
Julien Pernot
3
Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel
, 38000 Grenoble, France
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Bruno Daudin
;
Bruno Daudin
2Université Grenoble Alpes,
CEA, INAC-PHELIQS “Nanophysics and Semiconductors” Group
, 38000 Grenoble, France
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Shoji Ishibashi
Shoji Ishibashi
4
Research Center for Computational Design of Advanced Functional Materials (CD-FMat), National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8568, Japan
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Akira Uedono
1,a)
Alexandra-Madalina Siladie
2
Julien Pernot
3
Bruno Daudin
2
Shoji Ishibashi
4
1
Division of Applied Physics, Faculty of Pure and Applied Science, University of Tsukuba
, Tsukuba, Ibaraki 305-8573, Japan
2Université Grenoble Alpes,
CEA, INAC-PHELIQS “Nanophysics and Semiconductors” Group
, 38000 Grenoble, France
3
Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel
, 38000 Grenoble, France
4
Research Center for Computational Design of Advanced Functional Materials (CD-FMat), National Institute of Advanced Industrial Science and Technology (AIST)
, Tsukuba, Ibaraki 305-8568, Japan
J. Appl. Phys. 125, 175705 (2019)
Article history
Received:
January 12 2019
Accepted:
April 16 2019
Citation
Akira Uedono, Alexandra-Madalina Siladie, Julien Pernot, Bruno Daudin, Shoji Ishibashi; Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam. J. Appl. Phys. 7 May 2019; 125 (17): 175705. https://doi.org/10.1063/1.5088653
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