We investigate the terahertz optical properties of VO2 (M) films synthesized hydrothermally on a c-sapphire substrate by a two-step method. The terahertz transmittance is greater than 70% for the insulating state of monoclinic VO2 films, and the average modulation depth approaches 94% for frequencies of 0.2–2.0 THz. A sample prepared using 450 °C postannealing undergoes a sharp insulator–metal transition around 61 °C at 1.5 THz with a 97% modulation depth. Furthermore, the effects of the postannealing temperature on the structure, morphology, and phase-transition properties of VO2 film/c-sapphire samples are presented. The results show that the hydrothermal synthesis of VO2 polymorphs has potential applications in the terahertz wavelength range.
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28 April 2019
Research Article|
April 24 2019
Two-step hydrothermal growth of a thin film of vanadium dioxide on sapphire with large terahertz modulation depth
Special Collection:
Advances in Terahertz Solid-State Physics and Devices
Rui-ke Wang;
1
Department of Physics, Capital Normal University
, Beijing 100048, China
; Key Laboratory of Terahertz Optoelectronics, Ministry of Education
, Beijing 100048, China
; Beijing Key Laboratory for Terahertz Spectroscopy and Imaging
, Beijing 100048, China
; and Beijing Advanced Innovation Centre for Imaging Technology
, Beijing 100048, China
b)Authors to whom correspondence should be addressed: wanghai@cnu.edu.cn and wanghai_0410@qq.com and aihyoo@bit.edu.cn
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Hai Wang;
Hai Wang
b)
1
Department of Physics, Capital Normal University
, Beijing 100048, China
; Key Laboratory of Terahertz Optoelectronics, Ministry of Education
, Beijing 100048, China
; Beijing Key Laboratory for Terahertz Spectroscopy and Imaging
, Beijing 100048, China
; and Beijing Advanced Innovation Centre for Imaging Technology
, Beijing 100048, China
b)Authors to whom correspondence should be addressed: wanghai@cnu.edu.cn and wanghai_0410@qq.com and aihyoo@bit.edu.cn
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Zhi-qiang An;
Zhi-qiang An
1
Department of Physics, Capital Normal University
, Beijing 100048, China
; Key Laboratory of Terahertz Optoelectronics, Ministry of Education
, Beijing 100048, China
; Beijing Key Laboratory for Terahertz Spectroscopy and Imaging
, Beijing 100048, China
; and Beijing Advanced Innovation Centre for Imaging Technology
, Beijing 100048, China
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Jing-suo He;
Jing-suo He
1
Department of Physics, Capital Normal University
, Beijing 100048, China
; Key Laboratory of Terahertz Optoelectronics, Ministry of Education
, Beijing 100048, China
; Beijing Key Laboratory for Terahertz Spectroscopy and Imaging
, Beijing 100048, China
; and Beijing Advanced Innovation Centre for Imaging Technology
, Beijing 100048, China
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Cun-lin Zhang;
Cun-lin Zhang
1
Department of Physics, Capital Normal University
, Beijing 100048, China
; Key Laboratory of Terahertz Optoelectronics, Ministry of Education
, Beijing 100048, China
; Beijing Key Laboratory for Terahertz Spectroscopy and Imaging
, Beijing 100048, China
; and Beijing Advanced Innovation Centre for Imaging Technology
, Beijing 100048, China
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Guo-ping Pan;
Guo-ping Pan
a)
2
School of Materials Science and Engineering, Beijing Institute of Technology
, Beijing 100081, China
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Xiang Li
Xiang Li
b)
2
School of Materials Science and Engineering, Beijing Institute of Technology
, Beijing 100081, China
b)Authors to whom correspondence should be addressed: wanghai@cnu.edu.cn and wanghai_0410@qq.com and aihyoo@bit.edu.cn
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a)
Contributions: R. Wang and G. Pan contributed equally to this work.
b)Authors to whom correspondence should be addressed: wanghai@cnu.edu.cn and wanghai_0410@qq.com and aihyoo@bit.edu.cn
Note: This paper is part of the Special Topic section “Advances in Terahertz Solid-State Physics and Devices” published in Journal of Applied Physics April 21, 125(15) (2019).
J. Appl. Phys. 125, 163104 (2019)
Article history
Received:
August 01 2018
Accepted:
January 12 2019
Citation
Rui-ke Wang, Hai Wang, Zhi-qiang An, Jing-suo He, Cun-lin Zhang, Guo-ping Pan, Xiang Li; Two-step hydrothermal growth of a thin film of vanadium dioxide on sapphire with large terahertz modulation depth. J. Appl. Phys. 28 April 2019; 125 (16): 163104. https://doi.org/10.1063/1.5050640
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