X-ray diffraction and bright-field transmission electron microscopy are used to investigate the distribution and density of {111}-type stacking faults (SFs) present in a heteroepitaxial zincblende GaN epilayer with high phase purity, grown on a 3C-SiC/Si (001) substrate by metalorganic vapour-phase epitaxy. It is found that the 4° miscut towards the [110] direction of the substrate, which prevents the formation of undesirable antiphase domains, has a profound effect on the relative densities of SFs occurring on the different {111} planes. The two orientations of SFs in the [−110] zone, where the SF inclination angle with the GaN/SiC interface is altered by the 4° miscut, show a significant difference in density, with the steeper (111) SFs being more numerous than the shallower (−1−11) SFs by a factor of ∼5 at 380 nm from the GaN/SiC interface. In contrast, the two orientations of SFs in the [110] zone, which is unaffected by the miscut, have densities comparable with the (−1−11) SFs in the [−110] zone. A simple model, simulating the propagation and annihilation of SFs in zincblende GaN epilayers, reproduces the presence of local SF bunches observed in TEM data. The model also verifies that a difference in the starting density at the GaN/SiC interface of the two orientations of intersecting {111} SFs in the same zone reduces the efficiency of SF annihilation. Hence, (111) SFs have a higher density compared with SFs on the other three {111} planes, due to their preferential formation at the GaN/SiC interface caused by the miscut.
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14 March 2019
Research Article|
March 12 2019
Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM Available to Purchase
Lok Yi Lee
;
Lok Yi Lee
a)
1
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
a)Author to whom correspondence should be addressed: [email protected]
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Martin Frentrup;
Martin Frentrup
1
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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Petr Vacek;
Petr Vacek
1
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
2
Institute of Physics of Materials & CEITEC IPM, Academy of Sciences of the Czech Republic
, Žižkova 22, 61600 Brno, Czech Republic
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Menno J. Kappers;
Menno J. Kappers
1
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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David J. Wallis
;
David J. Wallis
1
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
3
Centre for High Frequency Engineering, University of Cardiff
, 5 The Parade, Newport Road, Cardiff CF24 3AA, United Kingdom
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Rachel A. Oliver
Rachel A. Oliver
1
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
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Lok Yi Lee
1,a)
Martin Frentrup
1
Petr Vacek
1,2
Menno J. Kappers
1
David J. Wallis
1,3
Rachel A. Oliver
1
1
Department of Materials Science and Metallurgy, University of Cambridge
, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
2
Institute of Physics of Materials & CEITEC IPM, Academy of Sciences of the Czech Republic
, Žižkova 22, 61600 Brno, Czech Republic
3
Centre for High Frequency Engineering, University of Cardiff
, 5 The Parade, Newport Road, Cardiff CF24 3AA, United Kingdom
a)Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 125, 105303 (2019)
Article history
Received:
November 25 2018
Accepted:
February 24 2019
Citation
Lok Yi Lee, Martin Frentrup, Petr Vacek, Menno J. Kappers, David J. Wallis, Rachel A. Oliver; Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM. J. Appl. Phys. 14 March 2019; 125 (10): 105303. https://doi.org/10.1063/1.5082846
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