The impact of doping on the bonding energy hierarchy and melting point of phase change material germanium telluride is studied. The underlying bonding energy decomposition is based on density functional theory calculations. It is shown that doping can influence the bonding energy hierarchy to lower the melting temperature and latent heat of fusion. Conversely, doping slightly increases the specific heat capacity. Nevertheless, doping induces a net reduction in energy consumption for the “reset” operation of phase change memory devices. This bonding energy analysis is three to four orders of magnitude more computationally efficient than the widely used ab initio molecular dynamics simulations. It is expected that this approach could be useful for next-generation high-throughput simulation-based phase change material design and optimization.
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7 September 2018
Research Article|
September 05 2018
Impact of doping on bonding energy hierarchy and melting of phase change materials
Jie Liu;
1
College of Electrical and Information Engineering, Hunan University
, Changsha, China
2
National Supercomputing Center in Changsha
, Hunan Province, China
3
Department of Electrical Engineering, University of Washington
, Washington, Seattle 98195, USA
b)Authors to whom correspondence should be addressed: jie_liu@hnu.edu.cn, liujie@uw.edu; zhaoyq@uw.edu; and anant@uw.edu
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Evan Wang;
Evan Wang
a)
3
Department of Electrical Engineering, University of Washington
, Washington, Seattle 98195, USA
4
Department of Electrical Engineering, Stanford University
, Stanford, California 94305, USA
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Yunqi Zhao;
Yunqi Zhao
b)
3
Department of Electrical Engineering, University of Washington
, Washington, Seattle 98195, USA
b)Authors to whom correspondence should be addressed: jie_liu@hnu.edu.cn, liujie@uw.edu; zhaoyq@uw.edu; and anant@uw.edu
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Xu Xu;
Xu Xu
3
Department of Electrical Engineering, University of Washington
, Washington, Seattle 98195, USA
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Jeong-Sun Moon;
Jeong-Sun Moon
5
HRL Laboratories
, Malibu, California 90265, USA
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M. P. Anantram
M. P. Anantram
b)
3
Department of Electrical Engineering, University of Washington
, Washington, Seattle 98195, USA
b)Authors to whom correspondence should be addressed: jie_liu@hnu.edu.cn, liujie@uw.edu; zhaoyq@uw.edu; and anant@uw.edu
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a)
J. Liu and E. Wang contributed equally to this work.
b)Authors to whom correspondence should be addressed: jie_liu@hnu.edu.cn, liujie@uw.edu; zhaoyq@uw.edu; and anant@uw.edu
J. Appl. Phys. 124, 094503 (2018)
Article history
Received:
May 11 2018
Accepted:
August 21 2018
Citation
Jie Liu, Evan Wang, Yunqi Zhao, Xu Xu, Jeong-Sun Moon, M. P. Anantram; Impact of doping on bonding energy hierarchy and melting of phase change materials. J. Appl. Phys. 7 September 2018; 124 (9): 094503. https://doi.org/10.1063/1.5039831
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