An all-solid-state AlGaN/GaN based ion-sensitive heterostructure field effect transistor (ISHFET) pH sensor was fabricated by integrating a noble metal (Au) quasi-reference electrode to improve the device stability when measuring the pH value of a small aqueous volume. In this paper, the influence of the size of the quasi-reference electrode against the stability of the pH readings was investigated. Through optimizing the size of the integrated quasi-reference electrode, the all-solid-state ISHFET pH sensor can sustain stable pH measurements for aqueous solutions of micro-litre size. A sensitivity of 55 mV/pH was achieved by the pH sensor at room temperature. Thus, the device may have potential uses in biomedical applications which require small volume pH measurements.
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21 July 2018
Research Article|
July 20 2018
Influence of an integrated quasi-reference electrode on the stability of all-solid-state AlGaN/GaN based pH sensors Available to Purchase
Jieying Xing
;
Jieying Xing
1
School of Electronics and Information Technology, Sun Yat-sen University
, Guangzhou 510006, People's Republic of China
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Dejia Huang;
Dejia Huang
1
School of Electronics and Information Technology, Sun Yat-sen University
, Guangzhou 510006, People's Republic of China
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Yaqiong Dai;
Yaqiong Dai
1
School of Electronics and Information Technology, Sun Yat-sen University
, Guangzhou 510006, People's Republic of China
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Yuebo Liu;
Yuebo Liu
1
School of Electronics and Information Technology, Sun Yat-sen University
, Guangzhou 510006, People's Republic of China
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Yuan Ren;
Yuan Ren
1
School of Electronics and Information Technology, Sun Yat-sen University
, Guangzhou 510006, People's Republic of China
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Xiaobiao Han;
Xiaobiao Han
1
School of Electronics and Information Technology, Sun Yat-sen University
, Guangzhou 510006, People's Republic of China
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Hang Yang;
Hang Yang
1
School of Electronics and Information Technology, Sun Yat-sen University
, Guangzhou 510006, People's Republic of China
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Yaqian Hou;
Yaqian Hou
1
School of Electronics and Information Technology, Sun Yat-sen University
, Guangzhou 510006, People's Republic of China
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Zhisheng Wu;
Zhisheng Wu
1
School of Electronics and Information Technology, Sun Yat-sen University
, Guangzhou 510006, People's Republic of China
2
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University
, Guangzhou 510275, People's Republic of China
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Yang Liu;
Yang Liu
1
School of Electronics and Information Technology, Sun Yat-sen University
, Guangzhou 510006, People's Republic of China
2
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University
, Guangzhou 510275, People's Republic of China
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Baijun Zhang
Baijun Zhang
a)
1
School of Electronics and Information Technology, Sun Yat-sen University
, Guangzhou 510006, People's Republic of China
2
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University
, Guangzhou 510275, People's Republic of China
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Jieying Xing
1
Dejia Huang
1
Yaqiong Dai
1
Yuebo Liu
1
Yuan Ren
1
Xiaobiao Han
1
Hang Yang
1
Yaqian Hou
1
Zhisheng Wu
1,2
Yang Liu
1,2
Baijun Zhang
1,2,a)
1
School of Electronics and Information Technology, Sun Yat-sen University
, Guangzhou 510006, People's Republic of China
2
State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University
, Guangzhou 510275, People's Republic of China
a)
E-mail: [email protected]
J. Appl. Phys. 124, 034904 (2018)
Article history
Received:
April 10 2018
Accepted:
July 02 2018
Citation
Jieying Xing, Dejia Huang, Yaqiong Dai, Yuebo Liu, Yuan Ren, Xiaobiao Han, Hang Yang, Yaqian Hou, Zhisheng Wu, Yang Liu, Baijun Zhang; Influence of an integrated quasi-reference electrode on the stability of all-solid-state AlGaN/GaN based pH sensors. J. Appl. Phys. 21 July 2018; 124 (3): 034904. https://doi.org/10.1063/1.5034367
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