Mechanical damage and stress caused by polishing and cutting of ferroelectric materials could deteriorate their dielectric, ferroelectric, and piezoelectric properties. BaTiO3 piezoelectric ceramics were polished and cut, and thermally annealed at 600, 800, 1000, and 1200 °C for recovery. The electrical measurements revealed a reduction in the coercive field, elimination of imprint behavior, and an increase in saturation polarization in the thermally annealed ceramics. Furthermore, the electromechanical properties measured by the resonance method, prior to thermal annealing were d33 = 184 pC/N, k33 = 0.36, and s33E = 10.9 × 10−12 m2/N, while the values after 1200 °C-4 h thermal annealing were d33 = 287 pC/N, k33 = 0.54, and s33E = 12.1 × 10−12 m2/N. The in situ crystal structure evaluation and Williamson-Hall analysis suggested the decrement of microstrain from 6.38 × 10−4 to 5.20 × 10−4, indicating the retrieval of the residual stress imposed. The enhancement of piezoelectricity by 56% was ascribed to the effective annealing out of the surface mechanical damaged layers.

1.
B.
Jaffe
,
W. R.
Cook
, and
H.
Jaffe
,
Piezoelectric Ceramics
(
Academic Press
,
London
,
1971
).
2.
S. E.
Park
and
T. R.
Shrout
,
J. Appl. Phys.
82
,
1804
(
1997
).
3.
J.
Rodel
,
W.
Jo
,
K. T. P.
Seifert
,
E. M.
Anton
,
T.
Granzow
, and
D.
Damjanovic
,
J. Am. Ceram. Soc.
92
,
1153
(
2009
).
4.
T. R.
Shrout
and
S. J.
Zhang
,
J. Electroceram.
19
,
113
(
2007
).
5.
D.
Damjanovic
,
Appl. Phys. Lett.
97
,
062906
(
2010
).
6.
T.
Hosina
,
K.
Takizawa
,
J.
Li
,
T.
Kasama
,
H.
Kakemoto
, and
T.
Tsurumi
,
Jpn. J. Appl. Phys., Part 1
47
,
7607
(
2008
).
7.
K.
Kinoshita
and
A.
Yamaji
,
J. Appl. Phys.
47
,
371
(
1976
).
8.
C. A.
Randall
,
N.
Kim
,
J. P.
Kucera
,
W.
Cao
, and
T. R.
Shrout
,
J. Am. Ceram. Soc.
81
,
677
(
1998
).
9.
S.
Huo
,
S.
Yuan
,
Z.
Tian
,
C.
Wang
, and
Y.
Qiu
,
J. Am. Ceram. Soc.
95
,
1383
(
2012
).
10.
P.
Zheng
,
J. L.
Zhang
,
Y. Q.
Tan
, and
C. L.
Wang
,
Acta Mater.
60
,
5022
(
2012
).
11.
D.
Ghosh
,
A.
Sakata
,
J.
Carter
,
P. A.
Thomas
,
H.
Han
,
J. C.
Nino
, and
J. L.
Jones
,
Adv. Funct. Mater.
24
,
885
(
2014
).
12.
Y.
Tan
,
J.
Zhang
,
Y.
Wu
,
C.
Wang
,
V.
Koval
,
B.
Shi
,
H.
Ye
,
R.
McKinnon
,
G.
Viola
, and
H.
Yan
,
Sci. Rep.
5
,
9953
(
2015
).
13.
T.
Karaki
,
K.
Yan
, and
M.
Adachi
,
Appl. Phys. Express
1
,
111402
(
2008
).
14.
Y.
Saito
,
H.
Takao
,
T.
Tani
,
T.
Nonoyama
,
K.
Takatori
,
T.
Homma
,
T.
Nagaya
, and
M.
Nakamura
,
Nature
432
,
84
(
2004
).
15.
G. L.
Messing
,
S.
Trolier-McKnistry
,
E. M.
Sabolsky
,
C.
Duran
,
S.
Kwon
,
B.
Brahmaroutu
,
P.
Park
,
H.
Yilmaz
,
P. W.
Rehrig
,
K. B.
Eitel
,
E.
Suvaci
,
M.
Seabaugh
, and
K. S.
Oh
,
Crit. Rev. Solid State Mater. Sci.
29
,
45
(
2004
).
16.
T.
Kimura
,
J. Ceram. Soc. Jpn.
114
,
15
(
2006
).
17.
S.-E.
Park
,
S.
Wada
,
L. E.
Cross
, and
T. R.
Shrout
,
J. Appl. Phys.
86
,
2746
(
1999
).
18.
A. B.
Haugen
,
M. I.
Morozov
,
M.
Johnsson
,
T.
Grande
, and
M. A.
Einarsrud
,
J. Appl. Phys.
116
,
134102
(
2014
).
19.
S.
Wada
,
K.
Yako
,
H.
Kakemoto
,
T.
Tsurumi
, and
T.
Kiguchi
,
J. Appl. Phys.
98
,
014109
(
2005
).
20.
Y.
Kasuya
,
Y.
Sato
,
R.
Urakami
,
K.
Yamada
,
R.
Teranishi
, and
K.
Kaneko
,
Jpn. J. Appl. Phys., Part 1
56
,
010312
(
2017
).
21.
S. W.
Kim
,
G. P.
Khanal
,
S.
Ueno
,
C.
Moriyoshi
,
Y.
Kuroiwa
, and
S.
Wada
,
J. Appl. Phys.
122
,
014103
(
2017
).
22.
G. P.
Khanal
,
S. W.
Kim
,
M.
Kim
,
I.
Fujii
,
S.
Ueno
, and
S.
Wada
,
J. Ceram. Soc. Jpn.
126
,
1
6
(
2018
).
23.
W.
Cao
and
C. A.
Randall
,
J. Phys. Chem Solids.
57
,
1499
(
1996
).
24.
M. P.
McNeal
,
S. J.
Jang
, and
R. E.
Newnham
,
J. Appl. Phys.
83
,
3288
(
1998
).
25.
A. K.
Goswami
,
J. Appl. Phys.
40
,
619
(
1969
).
26.
H. M.
Jang
and
K.-M.
Lee
,
J. Mater. Res.
10
,
3185
(
1995
).
27.
E. H.
Bogardus
and
R.
Roy
,
J. Am. Ceram. Soc.
48
,
205
(
1965
).
28.
S.
Wada
,
K.
Muraoka
,
H.
Kakemoto
,
T.
Tsurumi
, and
H.
Kumagai
,
Ferroelectrics
292
,
127
(
2003
).
29.
E. K.
Sanchez
,
S.
Ha
,
J.
Grim
,
M.
Skowronski
,
W. M.
Vetter
,
M.
Dudley
,
R.
Bertke
, and
W. C.
Mitchel
,
J. Electrochem. Soc.
149
,
G131
(
2002
).
30.
Institute of Radio Engineers
,
Proc. IRE
49
,
1161
(
1961
).
31.
H.
Kuwamoto
,
D. E.
Holmes
, and
N.
Otsuka
,
J. Electrochem. Soc.
134
,
1579
(
1987
).
32.
E. C.
Subbarao
,
M. C.
McQuarrie
, and
W. R.
Buessem
,
J. Appl. Phys.
28
,
1194
(
1957
).
33.
X.
Li
,
W. Y.
Shih
,
J. S.
Vartuli
,
D. L.
Milius
,
I. A.
Aksay
, and
W.-H.
Shih
,
J. Am. Ceram. Soc.
85
,
844
(
2002
).
34.
T.
Tsurumi
,
Y.
Kumano
,
N.
Ohashi
,
T.
Takenaka
, and
O.
Fukunaga
,
Jpn. J. Appl. Phys., Part 1
36
,
5970
(
1997
).
35.
M.
Hammer
,
C.
Monty
,
A.
Endriss
, and
M. J.
Hoffmann
,
J. Am. Ceram. Soc.
81
,
721
(
1998
).
36.
H.
Shen
and
F. H.
Pollak
,
Appl. Phys. Lett.
45
,
692
(
1984
).
37.
J.-H.
Chen
,
B.-H.
Hwang
,
T.-C.
Hsu
, and
H.-Y.
Lu
,
Mater. Chem. Phys.
91
,
67
(
2005
).
38.
P. J.
Withers
,
J. Appl. Cryst.
37
,
607
(
2004
).
39.
B. E.
Warren
,
X-Ray Diffraction
(
Dover Publications, Inc
.,
New York
,
1990
), Chap. 13.
40.
P.
Scardi
,
M.
Leoni
, and
R.
Delhez
,
J. Appl. Cryst.
37
,
381
(
2004
).
41.
T.
Ungar
and
A.
Borbely
,
Appl. Phys. Lett.
69
,
3173
(
1996
).
42.
N. S.
Goncalves
,
J. A.
Carvalho
,
Z. M.
Lima
, and
J. M.
Sasaki
,
Mater. Lett.
72
,
36
(
2012
).
43.
B. R.
Kumar
and
B.
Hymavathi
,
J. Asian Ceram. Soc.
5
,
94
(
2017
).
44.
T. M. K.
Thandavan
,
S. M. A.
Gani
,
C. S.
Wong
, and
R. M.
Nor
,
J. Nondestr. Eval.
34
,
14
(
2015
).
45.
P.
Bindu
and
S.
Thomas
,
J. Theor. Appl. Phys.
8
,
123
(
2014
).
46.
G. K.
Williamson
and
W. H.
Hall
,
Acta Metall.
1
,
22
(
1953
).
47.
D.
Zhou
,
M.
Kamlah
, and
D.
Munz
,
J. Eur. Ceram. Soc.
25
,
425
(
2005
).
48.
M.
Unruan
,
R.
Wongmaneerung
,
A.
Ngamjarurojana
,
Y.
Laosiritaworn
,
S.
Ananta
, and
R.
Yimnirun
,
J. Appl. Phys.
104
,
064107
(
2008
).
49.
Y.
Wu
,
J.
Zhang
,
Y.
Tan
, and
P.
Zheng
,
Ceram. Int.
42
,
9815
(
2016
).
50.
S. F.
Shao
,
J. L.
Zhang
,
Z.
Zhang
,
P.
Zheng
,
M. L.
Zhao
,
J. C.
Li
, and
C. L.
Wang
,
J. Phys. D: Appl. Phys.
41
,
125408
(
2008
).
51.
H.
Takahashi
,
Y.
Numamoto
,
J.
Tani
, and
S.
Tsurekawa
,
Jpn. J. Appl. Phys., Part 1
47
,
8468
(
2008
).

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