Yb3+ ions hold promises for high power emission in the near infrared (NIR). Yet, relevant matrices, comprising mediators to excite Yb3+, have to be found and the optical mechanisms have to be studied in detail. The purpose of this study is to report on the optical excitation and emission mechanisms of NIR photoluminescence (PL) of Yb-doped crystalline aluminum oxynitride thin films prepared at room temperature using reactive magnetron sputtering. Crystal structure and chemical composition are analyzed by transmission electron microscope and Rutherford backscattering spectrometry, respectively. Photoluminescence spectroscopies are used to investigate the excitation and emission mechanisms. NIR emission at 985 nm is obtained under indirect optical excitation using the 325 nm line of a He-Cd laser, the excitation mechanism is explored by photoluminescence excitation measurement (PLE), and the fine structure of the emitted energy levels is investigated by performing PL measurements at low temperature (LTPL). PLE shows that the host defects play the role of mediators to transfer the excitation energy to Yb ions. This offers different possibilities for the development of multiple excitation channels for Yb3+. Stark splitting of the energy levels of the 2F5/2 and 2F7/2 transitions is evidenced using LTPL in the 78 to 295 K range. Electronic transitions are ascribed to experimental emission lines based on good agreement with theoretical values. Moreover, the activation energies for PL thermal quenching are determined and correspond to the energy difference between highest energy quenched lines and thermally activated “hotlines.”
Skip Nav Destination
Article navigation
21 July 2018
Research Article|
July 18 2018
Ultraviolet optical excitation of near infrared emission of Yb-doped crystalline aluminum oxynitride thin films
Alaa E. Giba;
Alaa E. Giba
1
Université de Lorraine, CNRS, IJL
, F-54000 Nancy, France
2
Department Materials Science and Engineering, Saarland University
, D-66123 Saarbrücken, Germany
3
National Institute of Laser Enhanced Sciences, Cairo University
, Giza 12613, Egypt
Search for other works by this author on:
P. Pigeat;
P. Pigeat
1
Université de Lorraine, CNRS, IJL
, F-54000 Nancy, France
Search for other works by this author on:
S. Bruyere
;
S. Bruyere
1
Université de Lorraine, CNRS, IJL
, F-54000 Nancy, France
Search for other works by this author on:
H. Rinnert;
H. Rinnert
1
Université de Lorraine, CNRS, IJL
, F-54000 Nancy, France
Search for other works by this author on:
F. Mücklich;
F. Mücklich
2
Department Materials Science and Engineering, Saarland University
, D-66123 Saarbrücken, Germany
Search for other works by this author on:
R. Gago
;
R. Gago
4
Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas
, E-28049 Madrid, Spain
Search for other works by this author on:
a)
E-mail: david.horwat@univ-lorraine.fr
J. Appl. Phys. 124, 033102 (2018)
Article history
Received:
May 16 2018
Accepted:
June 27 2018
Citation
Alaa E. Giba, P. Pigeat, S. Bruyere, H. Rinnert, F. Mücklich, R. Gago, D. Horwat; Ultraviolet optical excitation of near infrared emission of Yb-doped crystalline aluminum oxynitride thin films. J. Appl. Phys. 21 July 2018; 124 (3): 033102. https://doi.org/10.1063/1.5040340
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Could not validate captcha. Please try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00
Citing articles via
Related Content
Creation and evolution of a “hotline” in superfluid helium
Low Temp. Phys. (April 2023)
Low temperature photoluminescence measurements on boron- and hydrogen-implanted 6H–SiC
Appl. Phys. Lett. (February 1997)
Some new features of the photoluminescence of SiC(6H), SiC(4H), and SiC(15R)
Journal of Applied Physics (July 1994)
Combined effects of Ga, N, and Al codoping in solution grown 3C–SiC
J. Appl. Phys. (July 2010)
Screening the built-in electric field in 4 H silicon carbide stacking faults
Appl. Phys. Lett. (March 2007)