Thin films of phase pure VO (M1 phase) are deposited on thermally grown oxide (Si/SiO) substrate by reactive pulsed laser deposition of vanadium metal target. The influence of deposition parameters is studied by varying oxygen partial pressure while keeping other parameters constant. A thin film obtained at 50 mTorr is found to be phase pure by XRD and Raman spectral studies. SEM and AFM studies show smooth morphology with a surface roughness of 3–5 nm. The quality of the thin film was further established by characterizing the 68 C (T) transition by 2–3 orders of jump in resistance and a 60% change in reflectivity with minimum hysteresis. This single step process of deposition would be a suitable method for fabricating devices for smart window and metamaterial applications.
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Synthesis of phase pure vanadium dioxide (VO2) thin film by reactive pulsed laser deposition
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7 October 2018
Research Article|
October 01 2018
Synthesis of phase pure vanadium dioxide (VO2) thin film by reactive pulsed laser deposition
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Devanshi Bhardwaj;
Devanshi Bhardwaj
1
Materials Research Centre, Indian Institute of Science
, Bengaluru 560012, India
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Ankur Goswami
;
Ankur Goswami
2
Department of Chemical and Materials Engineering, University of Alberta
, Edmonton T6 G 1H9, Canada
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A. M. Umarji
A. M. Umarji
a)
1
Materials Research Centre, Indian Institute of Science
, Bengaluru 560012, India
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1
Materials Research Centre, Indian Institute of Science
, Bengaluru 560012, India
2
Department of Chemical and Materials Engineering, University of Alberta
, Edmonton T6 G 1H9, Canada
a)
Electronic mail: [email protected]
J. Appl. Phys. 124, 135301 (2018)
Article history
Received:
June 28 2018
Accepted:
August 30 2018
Citation
Devanshi Bhardwaj, Ankur Goswami, A. M. Umarji; Synthesis of phase pure vanadium dioxide (VO2) thin film by reactive pulsed laser deposition. J. Appl. Phys. 7 October 2018; 124 (13): 135301. https://doi.org/10.1063/1.5046455
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