Bipolar resistive switching has been reported in ITO/V2O5/ITO structures. Synthesized from the sol-gel process, the nanostructured V2O5·nH2O xerogel thin film endures significant structural transition during the post-annealing step. The impact of the structural transition of the V2O5 film on the resistive switching properties is studied in this work. The switching voltage decreases from 6.5 V to 3.0 V when the annealing temperature increases from 220 °C to 280 °C and then increases up to 5.0 V at 350 °C. Above the annealing temperature of 350 °C, the reversible switching characteristics disappear. The thermogravimetric measurement shows that intercalated H2O molecules fully evaporate above 350 °C. X-ray diffraction shows that the xerogel phase gradually vanishes as the annealing temperature increases, and only α-V2O5 and β-V2O5 exist at high annealing temperatures. Ab initio simulations are performed to evaluate the formation energies of the oxygen vacancy in xerogel, α-V2O5, and β-V2O5 phases. The results are in good agreement with the experiments: the formation energy of the oxygen vacancy is significantly lower in xerogel than in α-V2O5 and β-V2O5, enabling the occurrence of reversible switching when the xerogel phase exists in the sandwich structure.
Engineering of the resistive switching properties in V2O5 thin film by atomic structural transition: Experiment and theory
Zhenni Wan, Hashem Mohammad, Yunqi Zhao, Cong Yu, Robert B. Darling, M. P. Anantram; Engineering of the resistive switching properties in V2O5 thin film by atomic structural transition: Experiment and theory. J. Appl. Phys. 14 September 2018; 124 (10): 105301. https://doi.org/10.1063/1.5045826
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