Here, we report on a transparent method to characterize individual layers in a double-layer electron system, which forms in a wide quantum well, and to determine their electron densities. The technique relies on the simultaneous measurement of the capacitances between the electron system and gates located on either side of the well. Modifications to the electron wave function due to the population of the second subband and the appearance of an additional electron layer can be detected. The magnetic field dependence of these capacitances is dominated by quantum corrections caused by the occupation of Landau levels in the nearest electron layer. The technique should be equally applicable to other implementations of a double layer electron system.
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28 February 2018
Research Article|
February 22 2018
Characterization of individual layers in a bilayer electron system produced in a wide quantum well
S. I. Dorozhkin;
S. I. Dorozhkin
a)
1
Institute of Solid State Physics RAS
, Moscow District, 142432 Chernogolovka, Russia
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A. A. Kapustin
;
A. A. Kapustin
1
Institute of Solid State Physics RAS
, Moscow District, 142432 Chernogolovka, Russia
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I. B. Fedorov;
I. B. Fedorov
1
Institute of Solid State Physics RAS
, Moscow District, 142432 Chernogolovka, Russia
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V. Umansky;
V. Umansky
2
Department of Physics, Weizmann Institute of Science
, 76100 Rehovot, Israel
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K. von Klitzing;
K. von Klitzing
3
Max-Planck-Institut für Festkörperforschung
, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
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J. H. Smet
J. H. Smet
3
Max-Planck-Institut für Festkörperforschung
, Heisenbergstrasse 1, D-70569 Stuttgart, Germany
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J. Appl. Phys. 123, 084301 (2018)
Article history
Received:
December 15 2017
Accepted:
February 02 2018
Citation
S. I. Dorozhkin, A. A. Kapustin, I. B. Fedorov, V. Umansky, K. von Klitzing, J. H. Smet; Characterization of individual layers in a bilayer electron system produced in a wide quantum well. J. Appl. Phys. 28 February 2018; 123 (8): 084301. https://doi.org/10.1063/1.5019655
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