In this work, we give a direct interpretation of micrographs of the 60° and 90° defect core at the GaAs/Si interface using aberration corrected scanning transmission electron microscopy. We investigate the post-growth annealing effects on dislocation rearrangement at the interface as well as the threading dislocations in buffer layers; finally, the density of threading dislocations has been calculated as a function of annealing temperature.
Effect of rapid thermal annealing on threading dislocation density in III-V epilayers monolithically grown on silicon
W. Li, S. Chen, M. Tang, J. Wu, R. Hogg, A. Seeds, H. Liu, I. Ross; Effect of rapid thermal annealing on threading dislocation density in III-V epilayers monolithically grown on silicon. J. Appl. Phys. 7 June 2018; 123 (21): 215303. https://doi.org/10.1063/1.5011161
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