In this work, we give a direct interpretation of micrographs of the 60° and 90° defect core at the GaAs/Si interface using aberration corrected scanning transmission electron microscopy. We investigate the post-growth annealing effects on dislocation rearrangement at the interface as well as the threading dislocations in buffer layers; finally, the density of threading dislocations has been calculated as a function of annealing temperature.

You do not currently have access to this content.