We address the temperature influence on the precessional motion of electron spins under a transverse magnetic field, studied in GaAs/AlGaAs triple quantum wells, using pump-probe Kerr rotation. In the presence of an applied in-plane magnetic field, the TRKR measurements show the robustness of carrier's spin polarization against temperature, which can be easily traced in an extended range up to 250 K. By tuning the pump-probe wavelength to the exciton bound to a neutral donor transition, we observed a remarkably long-lasting spin coherence (with dephasing time 14 ns) limited by the spin hopping process and exchange interaction between the donor sites, as well as the ensemble spread of the g-factor. The temperature dependent spin dephasing time revealed a double linear dependence due to the different relaxation mechanisms active in respective temperature ranges. We observed that the increase in sample temperature from 5 K to 250 K leads to a strong reduction by almost 98%/97% for the excitation wavelengths of 823/821 nm. Furthermore, we noticed that the temperature increase not only causes the reduction of spin lifetime, but can also lead to the variation of the electron g-factor. Additionally, the spin dynamics were studied through the dependencies on the applied magnetic field and optical pump power.
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7 June 2018
Research Article|
June 06 2018
Robustness of spin polarization against temperature in multilayer structure: Triple quantum well
S. Ullah;
S. Ullah
a)
1
Instituto de Física, Universidade de São Paulo
, Caixa Postal 66318, CEP 05315-970 São Paulo, SP, Brazil
2
Department of Physics, Gomal University
, Dera Ismail Khan 29220, KP, Pakistan
a)Author to whom correspondence should be addressed: [email protected]
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F. C. D. Moraes
;
F. C. D. Moraes
1
Instituto de Física, Universidade de São Paulo
, Caixa Postal 66318, CEP 05315-970 São Paulo, SP, Brazil
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G. M. Gusev
;
G. M. Gusev
1
Instituto de Física, Universidade de São Paulo
, Caixa Postal 66318, CEP 05315-970 São Paulo, SP, Brazil
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A. K. Bakarov
;
A. K. Bakarov
3
Institute of Semiconductor Physics and Novosibirsk State University
, Novosibirsk 630090, Russia
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F. G. G. Hernandez
F. G. G. Hernandez
1
Instituto de Física, Universidade de São Paulo
, Caixa Postal 66318, CEP 05315-970 São Paulo, SP, Brazil
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a)Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 123, 214306 (2018)
Article history
Received:
January 13 2018
Accepted:
May 15 2018
Citation
S. Ullah, F. C. D. Moraes, G. M. Gusev, A. K. Bakarov, F. G. G. Hernandez; Robustness of spin polarization against temperature in multilayer structure: Triple quantum well. J. Appl. Phys. 7 June 2018; 123 (21): 214306. https://doi.org/10.1063/1.5022313
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