The excitonic optical properties of an Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum well structure were studied by photoluminescence (PL) spectroscopy at various temperatures. An analysis of the temperature dependence of PL peak energy revealed the stronger localization of excitons than biexcitons, consistent with the trend predicted from the difference between the spatial extents of excitons and biexcitons. The PL linewidth of the excitons increased linearly with increasing temperature up to 300 K and then more rapidly above 300 K. This result indicated that the exciton-longitudinal optical phonon interaction became prominent as the broadening mechanism of the exciton linewidth above 300 K. The luminescence of both excitons and biexcitons exhibited low thermal quenching, with their intensities at 300 K remaining at 37% and 47%, respectively, of their intensities at 4 K. These observations reflected the high thermal stability of the excitons and biexcitons in this multiple quantum well structure. In addition, the ratio of the PL intensity of the exciton-biexciton scattering to the product of the exciton and biexciton luminescence intensities was independent of temperature up to 200 K and increased rapidly with increasing temperature above 250 K. The temperature-independent behavior of this ratio up to 200 K originated from the localization of excitons and biexcitons, and the rapid increase in this ratio with temperature above 250 K reflected an increase in the frequency of interactions between the excitons and biexcitons due to the gradual delocalization of the excitons and biexcitons with increasing temperature.

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