We present an analytic model to describe the DC current-voltage (I-V) relationship in scaled III-nitride high electron mobility transistors (HEMTs) in which transport within the channel is quasi-ballistic in nature. Following Landauer's transport theory and charge calculation based on two-dimensional electrostatics that incorporates negative momenta states from the drain terminal, an analytic expression for current as a function of terminal voltages is developed. The model interprets the non-linearity of access regions in non-self-aligned HEMTs. Effects of Joule heating with temperature-dependent thermal conductivity are incorporated in the model in a self-consistent manner. With a total of 26 input parameters, the analytic model offers reduced empiricism compared to existing GaN HEMT models. To verify the model, experimental I-V data of InAlN/GaN with InGaN back-barrier HEMTs with channel lengths of 42 and 105 nm are considered. Additionally, the model is validated against numerical I-V data obtained from DC hydrodynamic simulations of an unintentionally doped AlGaN-on-GaN HEMT with 50-nm gate length. The model is also verified against pulsed I-V measurements of a 150-nm T-gate GaN HEMT. Excellent agreement between the model and experimental and numerical results for output current, transconductance, and output conductance is demonstrated over a broad range of bias and temperature conditions.
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14 May 2018
Research Article|
May 08 2018
An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors
Kexin Li;
Kexin Li
a)
Department of Electrical and Computer Engineering, New York University
, Brooklyn, New York 11201, USA
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Shaloo Rakheja
Shaloo Rakheja
b)
Department of Electrical and Computer Engineering, New York University
, Brooklyn, New York 11201, USA
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a)
Electronic mail: [email protected]
b)
Electronic mail: [email protected]
J. Appl. Phys. 123, 184501 (2018)
Article history
Received:
February 08 2018
Accepted:
April 19 2018
Citation
Kexin Li, Shaloo Rakheja; An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors. J. Appl. Phys. 14 May 2018; 123 (18): 184501. https://doi.org/10.1063/1.5025339
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