Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has been shown that self-interstitial related defects which are immobile even at room temperatures can be activated by very low forward currents at liquid nitrogen temperatures. Their activation is accompanied by the appearance of interstitial carbon atoms. It has been found that at rather high forward current densities which enhance BiOi complex disappearance, a retardation of Ci annealing takes place. Contrary to conventional thermal annealing of the interstitial boron-interstitial oxygen complex, the use of forward current injection helps to recover an essential part of charge carriers removed due to irradiation.
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28 April 2018
Research Article|
January 25 2018
Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen
L. F. Makarenko
;
L. F. Makarenko
a)
1
Belarusian State University
, Independence Ave. 4, Minsk 220030, Belarus
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S. B. Lastovskii;
S. B. Lastovskii
2
Scientific-Practical Materials Research Centre of NAS of Belarus
, Minsk, Belarus
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H. S. Yakushevich;
H. S. Yakushevich
2
Scientific-Practical Materials Research Centre of NAS of Belarus
, Minsk, Belarus
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M. Moll
;
M. Moll
3
CERN
, European Organization for Nuclear Research, Geneva, Switzerland
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I. Pintilie
I. Pintilie
4
National Institute of Materials Physics
, Atomistilor 105 bis, Magurele 077125, Romania
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J. Appl. Phys. 123, 161576 (2018)
Article history
Received:
October 28 2017
Accepted:
January 04 2018
Citation
L. F. Makarenko, S. B. Lastovskii, H. S. Yakushevich, M. Moll, I. Pintilie; Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen. J. Appl. Phys. 28 April 2018; 123 (16): 161576. https://doi.org/10.1063/1.5010965
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