X-ray diffraction is one of the most popular experimental methods employed for determination of dislocation densities, as it can recognize both the strain fields and the local lattice rotations produced by dislocations. The main challenge of the quantitative analysis of the dislocation density is the formulation of a suitable microstructure model, which describes the dislocation arrangement and the effect of the interactions between the strain fields from neighboring dislocations reliably in order to be able to determine the dislocation densities precisely. The aim of this study is to prove the capability of X-ray diffraction and two computational methods, which are frequently used for quantification of the threading dislocation densities from X-ray diffraction measurements, in the special case of partially bunched threading dislocations. The first method is based on the analysis of the dislocation-controlled crystal mosaicity, and the other one on the analysis of diffuse X-ray scattering from threading dislocations. The complementarity of both methods is discussed. Furthermore, it is shown how the complementarity of these methods can be used to improve the results of the quantitative analysis of bunched and thus inhomogeneously distributed threading dislocations and to get a better insight into the dislocation arrangement.
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28 April 2018
Research Article|
December 28 2017
Density of bunched threading dislocations in epitaxial GaN layers as determined using X-ray diffraction Available to Purchase
M. Barchuk;
M. Barchuk
1
Institute of Materials Science, TU Bergakademie Freiberg
, Gustav-Zeuner-Str. 5, 09599 Freiberg, Germany
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V. Holý;
V. Holý
2
Department of Condensed Matter Physics, Charles University
, Ke Karlovu 5, 121 16 Prague, Czech Republic
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D. Rafaja
D. Rafaja
1
Institute of Materials Science, TU Bergakademie Freiberg
, Gustav-Zeuner-Str. 5, 09599 Freiberg, Germany
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1
Institute of Materials Science, TU Bergakademie Freiberg
, Gustav-Zeuner-Str. 5, 09599 Freiberg, Germany
2
Department of Condensed Matter Physics, Charles University
, Ke Karlovu 5, 121 16 Prague, Czech Republic
J. Appl. Phys. 123, 161552 (2018)
Article history
Received:
October 17 2017
Accepted:
December 05 2017
Citation
M. Barchuk, V. Holý, D. Rafaja; Density of bunched threading dislocations in epitaxial GaN layers as determined using X-ray diffraction. J. Appl. Phys. 28 April 2018; 123 (16): 161552. https://doi.org/10.1063/1.5009521
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