Self-diffusion experiments in single crystalline isotopically controlled silicon nanowires with diameters of 70 and 400 nm at 850 and are reported. The isotope structures were first epitaxially grown on top of silicon substrate wafers. Nanowires were subsequently fabricated using a nanosphere lithography process in combination with inductively coupled plasma dry reactive ion etching. Three-dimensional profiling of the nanosized structure before and after diffusion annealing was performed by means of atom probe tomography (APT). Self-diffusion profiles obtained from APT analyses are accurately described by Fick's law for self-diffusion. Data obtained for silicon self-diffusion in nanowires are equal to the results reported for bulk silicon crystals, i.e., finite size effects and high surface-to-volume ratios do not significantly affect silicon self-diffusion. This shows that the properties of native point defects determined from self-diffusion in bulk crystals also hold for nanosized silicon structures with diameters down to 70 nm.
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28 April 2018
Research Article|
October 19 2017
Self-diffusion in single crystalline silicon nanowires
T. Südkamp;
T. Südkamp
1
Institute of Materials Physics, Westfälische Wilhelms-Universität Münster
, 48149 Münster, Germany
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G. Hamdana;
G. Hamdana
2
Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig
, 38106 Braunschweig, Germany
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M. Descoins;
M. Descoins
3
IM2NP, CNRS-Universités d'Aix-Marseille et de Toulon
, Case 142, 13397 Marseille Cedex 20, France
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D. Mangelinck;
D. Mangelinck
3
IM2NP, CNRS-Universités d'Aix-Marseille et de Toulon
, Case 142, 13397 Marseille Cedex 20, France
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H. S. Wasisto;
H. S. Wasisto
2
Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig
, 38106 Braunschweig, Germany
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E. Peiner;
E. Peiner
2
Institute of Semiconductor Technology (IHT) and Laboratory for Emerging Nanometrology (LENA), Technische Universität Braunschweig
, 38106 Braunschweig, Germany
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a)
Electronic mail: bracht@uni-muenster.de
J. Appl. Phys. 123, 161515 (2018)
Article history
Received:
July 20 2017
Accepted:
September 21 2017
Citation
T. Südkamp, G. Hamdana, M. Descoins, D. Mangelinck, H. S. Wasisto, E. Peiner, H. Bracht; Self-diffusion in single crystalline silicon nanowires. J. Appl. Phys. 28 April 2018; 123 (16): 161515. https://doi.org/10.1063/1.4996987
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