Self-diffusion experiments in single crystalline isotopically controlled silicon nanowires with diameters of 70 and 400 nm at 850 and are reported. The isotope structures were first epitaxially grown on top of silicon substrate wafers. Nanowires were subsequently fabricated using a nanosphere lithography process in combination with inductively coupled plasma dry reactive ion etching. Three-dimensional profiling of the nanosized structure before and after diffusion annealing was performed by means of atom probe tomography (APT). Self-diffusion profiles obtained from APT analyses are accurately described by Fick's law for self-diffusion. Data obtained for silicon self-diffusion in nanowires are equal to the results reported for bulk silicon crystals, i.e., finite size effects and high surface-to-volume ratios do not significantly affect silicon self-diffusion. This shows that the properties of native point defects determined from self-diffusion in bulk crystals also hold for nanosized silicon structures with diameters down to 70 nm.
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Research Article| October 19 2017
Self-diffusion in single crystalline silicon nanowires
H. S. Wasisto;
T. Südkamp, G. Hamdana, M. Descoins, D. Mangelinck, H. S. Wasisto, E. Peiner, H. Bracht; Self-diffusion in single crystalline silicon nanowires. J. Appl. Phys. 28 April 2018; 123 (16): 161515. https://doi.org/10.1063/1.4996987
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