SiC based metal-oxide-semiconductor field-effect transistors (MOSFETs) have gained a significant importance in power electronics applications. However, electrically active defects at the SiC/SiO2 interface degrade the ideal behavior of the devices. The relevant microscopic defects can be identified by electron paramagnetic resonance (EPR) or electrically detected magnetic resonance (EDMR). This helps to decide which changes to the fabrication process will likely lead to further increases of device performance and reliability. EDMR measurements have shown very similar dominant hyperfine (HF) spectra in differently processed MOSFETs although some discrepancies were observed in the measured g-factors. Here, the HF spectra measured of different SiC MOSFETs are compared, and it is argued that the same dominant defect is present in all devices. A comparison of the data with simulated spectra of the C dangling bond (PbC) center and the silicon vacancy (VSi) demonstrates that the PbC center is a more suitable candidate to explain the observed HF spectra.
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28 April 2018
Research Article|
October 19 2017
Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface
G. Gruber;
G. Gruber
a)
1
Institute of Solid State Physics, Graz University of Technology
, Petersgasse 16, 8010 Graz, Austria
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J. Cottom;
J. Cottom
2
Department of Physics and Astronomy, University College London
, Gower Street, London WC1E 6BT, United Kingdom
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R. Meszaros;
R. Meszaros
3
Infineon Technologies
, Siemensstraße 2, 9500 Villach, Austria
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M. Koch
;
M. Koch
4
Institute of Experimental Physics, Graz University of Technology
, Petersgasse 16, 8010 Graz, Austria
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G. Pobegen
;
G. Pobegen
5
KAI GmbH
, Europastraße 8, 9500 Villach, Austria
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T. Aichinger;
T. Aichinger
3
Infineon Technologies
, Siemensstraße 2, 9500 Villach, Austria
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D. Peters;
D. Peters
6
Infineon Technologies
, Schottkystraße 10, 91058 Erlangen, Germany
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P. Hadley
P. Hadley
1
Institute of Solid State Physics, Graz University of Technology
, Petersgasse 16, 8010 Graz, Austria
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J. Appl. Phys. 123, 161514 (2018)
Article history
Received:
June 01 2017
Accepted:
September 18 2017
Citation
G. Gruber, J. Cottom, R. Meszaros, M. Koch, G. Pobegen, T. Aichinger, D. Peters, P. Hadley; Electrically detected magnetic resonance of carbon dangling bonds at the Si-face 4H-SiC/SiO2 interface. J. Appl. Phys. 28 April 2018; 123 (16): 161514. https://doi.org/10.1063/1.4985856
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