Quantitative study of energy-transfer mechanism in Eu,O-codoped GaN by time-resolved photoluminescence spectroscopy

In order to investigate the excitation processes in Eu,O-codoped GaN (GaN:Eu,O), the time-resolved photoluminescence signal including the rising part is analyzed. A rate equation is developed based upon a model for the excitation processes in GaN:Eu to fit the experimental data. The non-radiative recombination rate of the trap state in the GaN host, the energy transfer rate between the Eu³⁺ ions and the GaN host, the radiative transition probability of Eu³⁺ ion, as well as the ratio of the number of luminescent sites (OMVPE 4α and OMVPE 4β), are simultaneously determined. It is revealed and quantified that radiative transition probability of the Eu ion is the bottleneck for the enhancement of light output from GaN:Eu. We also evaluate the effect of the growth conditions on the luminescent efficiency of GaN:Eu quantitatively, and find the correlation between emission intensity of GaN:Eu and the fitting parameters introduced in our model.