High-temperature structural materials undergo oxidation during the service, and stress would generate in the oxide film. Understanding the coupling effect between stress and oxidation contributes to the understanding of material degradation and failure during the oxidation process. Here, we propose a model to investigative the coupling effect of stress and oxidation at high temperature by considering the three-stage oxidation process, where both the interface reaction and the diffusion process are present. The governing equations including the oxidation kinetics and stress equilibrium for isothermal oxidation under stress-oxidation coupling effect have been derived. The theory is validated by comparing with the experimental results of SiO2 grown on Si substrate. Results show that the coupling of stress and oxidation influences the growth of the oxide film by affecting all three stages of the oxidation process.
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Effect of interface reaction and diffusion on stress-oxidation coupling at high temperature
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21 April 2018
Research Article|
April 17 2018
Effect of interface reaction and diffusion on stress-oxidation coupling at high temperature
Mengkun Yue;
Mengkun Yue
1
AML, Department of Engineering Mechanics, Tsinghua University
, Beijing 100084, China
2
Interdisciplinary Research Center for Flexible Electronics Technology, Tsinghua University
, Beijing 100084, China
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Xuelin Dong;
Xuelin Dong
3
Key Laboratory of Petroleum Engineering, China University of Petroleum
, Beijing 102249, China
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Xufei Fang
;
Xufei Fang
a)
4
Max-Planck-Institut für Eisenforschung GmbH
, Max-Planck-Str. 1, 40237 Düsseldorf, Germany
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J. Appl. Phys. 123, 155301 (2018)
Article history
Received:
February 07 2018
Accepted:
March 22 2018
Citation
Mengkun Yue, Xuelin Dong, Xufei Fang, Xue Feng; Effect of interface reaction and diffusion on stress-oxidation coupling at high temperature. J. Appl. Phys. 21 April 2018; 123 (15): 155301. https://doi.org/10.1063/1.5025149
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