Thermochromic GexV1−xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (∼95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.
References
1.
F. J.
Morin
, Phys. Rev. Lett.
3
, 34
–36
(1959
).2.
C. N.
Berglund
and H. J.
Guggenheim
, Phys. Rev.
185
, 1022
–1033
(1969
).3.
J. B.
Goodenough
, J. Solid State Chem.
3
, 490
–500
(1971
).4.
A.
Cavalleri
, T.
Dekorsy
, H. H. W.
Chong
, J. C.
Kieffer
, and R. W.
Schoenlein
, Phys. Rev. B - Condens. Matter Mater. Phys.
70
, 161102(R)
(2004
).5.
A.
Cavalleri
, C.
Tóth
, C. W.
Siders
, J. A.
Squier
, F.
Ráksi
, P.
Forget
, and J. C.
Kieffer
, Phys. Rev. Lett.
87
, 237401
(2001
).6.
A. S.
Barker
, H. W.
Verleur
, and H. J.
Guggenheim
, Phys. Rev. Lett.
17
, 1286
–1289
(1966
).7.
A.
Paone
, R.
Sanjines
, P.
Jeanneret
, and A.
Schüler
, Sol. Energy
118
, 107
–116
(2015
).8.
J.-C.
Orlianges
, J.
Leroy
, A.
Crunteanu
, R.
Mayet
, P.
Carles
, and C.
Champeaux
, Appl. Phys. Lett.
101
, 133102
(2012
).9.
S.
Lee
, K.
Hippalgaonkar
, F.
Yang
, J.
Hong
, C.
Ko
, J.
Suh
, K.
Liu
, K.
Wang
, J. J.
Urban
, X.
Zhang
, C.
Dames
, S. A.
Hartnoll
, O.
Delaire
, and J.
Wu
, Science
355
, 371
–374
(2017
).10.
H.
Wang
, X.
Yi
, S.
Chen
, and X.
Fu
, Sens. Actuators, A
122
, 108
–112
(2005
).11.
W. A.
Vitale
, E. A.
Casu
, A.
Biswas
, T.
Rosca
, C.
Alper
, A.
Krammer
, G. V.
Luong
, Q.-T.
Zhao
, S.
Mantl
, A.
Schüler
, and A. M.
Ionescu
, Sci. Rep.
7
, 355
(2017
).12.
W. A.
Vitale
, L.
Petit
, C. F.
Moldovan
, M.
Fernández-Bolanos
, A.
Paone
, A.
Schüler
, and A. M.
Ionescu
, Sens. Actuators, A
241
, 245
–253
(2016
).13.
N.
Émond
, A.
Hendaoui
, and M.
Chaker
, Appl. Phys. Lett.
107
, 143507
(2015
).14.
C. G.
Granqvist
, Thin Solid Films
193–194
, 730
–741
(1990
).15.
L.
Zhao
, L.
Miao
, C.
Liu
, C.
Li
, T.
Asaka
, Y.
Kang
, Y.
Iwamoto
, S.
Tanemura
, H.
Gu
, and H.
Su
, Sci. Rep.
4
, 7000
(2014
).16.
A.
Paone
, M.
Geiger
, R.
Sanjines
, and A.
Schüler
, Sol. Energy
110
, 151
–159
(2014
).17.
M.
Benkahoul
, M.
Chaker
, J.
Margot
, E.
Haddad
, R.
Kruzelecky
, B.
Wong
, W.
Jamroz
, and P.
Poinas
, Sol. Energy Mater. Sol. Cells
95
, 3504
–3508
(2011
).18.
R. M.
Wentzcovitch
, W. W.
Schulz
, and P. B.
Allen
, Phys. Rev. Lett.
72
, 3389
–3392
(1994
).19.
T. M.
Rice
, H.
Launois
, and J. P.
Pouget
, Phys. Rev. Lett.
73
, 3042–3042
(1994
).20.
A.
Zylbersztejn
and N. F.
Mott
, Phys. Rev. B
11
, 4383
–4395
(1975
).21.
S.
Biermann
, A.
Poteryaev
, A. I.
Lichtenstein
, and A.
Georges
, Phys. Rev. Lett.
94
, 026404
(2005
).22.
A.
Paone
, R.
Sanjines
, P.
Jeanneret
, H. J.
Whitlow
, E.
Guibert
, G.
Guibert
, F.
Bussy
, J.-L.
Scartezzini
, and A.
Schüler
, J. Alloys Compd.
621
, 206
–211
(2015
).23.
J. B.
MacChesney
and H. J.
Guggenheim
, J. Phys. Chem. Solids
30
, 225
–234
(1969
).24.
H.
Futaki
and M.
Aoki
, Jpn. J. Appl. Phys., Part 1
8
, 1008
–1013
(1969
).25.
I.
Kitahiro
and A.
Watanabe
, Jpn. J. Appl. Phys., Part 1
6
, 1023
–1024
(1967
).26.
B.
Chen
, D.
Yang
, P. A.
Charpentier
, and M.
Zeman
, Sol. Energy Mater. Sol. Cells
93
, 1550
–1554
(2009
).27.
A.
Gentle
and G. B.
Smith
, J. Phys. D: Appl. Phys.
41
, 015402
(2008
).28.
T. E.
Phillips
, R. A.
Murphy
, and T. O.
Poehler
, Mater. Res. Bull.
22
, 1113
–1123
(1987
).29.
B. L.
Brown
, M.
Lee
, P. G.
Clem
, C. D.
Nordquist
, T. S.
Jordan
, S. L.
Wolfley
, D.
Leonhardt
, C.
Edney
, and J. A.
Custer
, J. Appl. Phys.
113
, 173704
(2013
).30.
H.
Futaki
, K.
Kobayashi
, M.
Aoki
, T.
Shimoda
, E.
Yamada
, and K.
Narita
, U.S. patent 3,402,131 (17 September 1968
).31.
A.
Krammer
, A.
Gremaud
, O.
Bouvard
, R.
Sanjines
, and A.
Schüler
, Surf. Interface Anal.
48
, 440
–444
(2016
).32.
N. P.
Barradas
, C.
Jeynes
, and R. P.
Webb
, Appl. Phys. Lett.
71
, 291
(1997
).33.
J. C.
Rakotoniaina
, R.
Mokrani-Tamellin
, J. R.
Gavarri
, G.
Vacquier
, A.
Casalot
, and G.
Calvarin
, J. Solid State Chem.
103
, 81
–94
(1993
).34.
A.
Molle
, N. K.
Bhuiyan
, G.
Tallarida
, and M.
Fanciulli
, Appl. Phys. Lett.
89
, 083504
(2006
).35.
D.
Brassard
, S.
Fourmaux
, M.
Jean-Jacques
, J. C.
Kieffer
, and M. A.
El Khakan
, Appl. Phys. Lett.
87
, 051910
(2005
).36.
D.
Ruzmetov
, K. T.
Zawilski
, V.
Narayanamurti
, and S.
Ramanathan
, J. Appl. Phys.
102
, 113715
(2007
).37.
L. A.
Ladd
and W.
Paul
, Solid State Commun.
7
, 425
–428
(1969
).38.
P. J.
Hood
and J. F.
Denatale
, J. Appl. Phys.
70
, 376
–381
(1991
).39.
P.
Jin
, K.
Yoshimura
, and S.
Tanemura
, J. Vac. Sci. Technol., A
15
, 1113
(1997
).40.
H.
Zhang
, Z.
Wu
, D.
Yan
, X.
Xu
, and Y.
Jiang
, Thin Solid Films
552
, 218
–224
(2014
).41.
R.
Lopez
, T. E.
Haynes
, L. A.
Boatner
, L. C.
Feldman
, and R. F.
Haglund
, Phys. Rev. B
65
, 224113
(2002
).42.
J. Y.
Suh
, R.
Lopez
, L. C.
Feldman
, and R. F.
Haglund
, J. Appl. Phys.
96
, 1209
–1213
(2004
).43.
J.
Du
, Y.
Gao
, H.
Luo
, L.
Kang
, Z.
Zhang
, Z.
Chen
, and C.
Cao
, Sol. Energy Mater. Sol. Cells
95
, 469
–475
(2011
).44.
J.
Narayan
and V. M.
Bhosle
, J. Appl. Phys.
100
, 103524
(2006
).45.
Y.
Wu
, L.
Fan
, Q.
Liu
, S.
Chen
, W.
Huang
, F.
Chen
, G.
Liao
, C.
Zou
, and Z.
Wu
, Sci. Rep.
5
, 9328
(2015
).© 2017 Author(s).
2017
Author(s)
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