Thermochromic GexV1−xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (∼95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.
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28 July 2017
Research Article|
July 27 2017
Elevated transition temperature in Ge doped VO2 thin films Available to Purchase
Anna Krammer;
Anna Krammer
a)
1
Solar Energy and Building Physics Laboratory (LESO-PB), EPFL
, Lausanne CH-1015, Switzerland
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Arnaud Magrez;
Arnaud Magrez
2
Institute of Condensed Matter Physics (ICMP), EPFL
, Lausanne CH-1015, Switzerland
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Wolfgang A. Vitale;
Wolfgang A. Vitale
3
Nanoelectronic Devices Laboratory (NanoLab), EPFL
, Lausanne CH-1015, Switzerland
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Piotr Mocny;
Piotr Mocny
4
Polymers Laboratory (LP), EPFL
, Lausanne CH-1015, Switzerland
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Patrick Jeanneret
;
Patrick Jeanneret
5
Surface Engineering Group (Ionlab-Arc), University of Applied Sciences (HES-SO)
, La Chaux-de-Fonds CH-2300, Switzerland
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Edouard Guibert;
Edouard Guibert
5
Surface Engineering Group (Ionlab-Arc), University of Applied Sciences (HES-SO)
, La Chaux-de-Fonds CH-2300, Switzerland
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Harry J. Whitlow;
Harry J. Whitlow
b)
5
Surface Engineering Group (Ionlab-Arc), University of Applied Sciences (HES-SO)
, La Chaux-de-Fonds CH-2300, Switzerland
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Adrian M. Ionescu;
Adrian M. Ionescu
3
Nanoelectronic Devices Laboratory (NanoLab), EPFL
, Lausanne CH-1015, Switzerland
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Andreas Schüler
Andreas Schüler
1
Solar Energy and Building Physics Laboratory (LESO-PB), EPFL
, Lausanne CH-1015, Switzerland
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Anna Krammer
1,a)
Arnaud Magrez
2
Wolfgang A. Vitale
3
Piotr Mocny
4
Patrick Jeanneret
5
Edouard Guibert
5
Harry J. Whitlow
5,b)
Adrian M. Ionescu
3
Andreas Schüler
1
1
Solar Energy and Building Physics Laboratory (LESO-PB), EPFL
, Lausanne CH-1015, Switzerland
2
Institute of Condensed Matter Physics (ICMP), EPFL
, Lausanne CH-1015, Switzerland
3
Nanoelectronic Devices Laboratory (NanoLab), EPFL
, Lausanne CH-1015, Switzerland
4
Polymers Laboratory (LP), EPFL
, Lausanne CH-1015, Switzerland
5
Surface Engineering Group (Ionlab-Arc), University of Applied Sciences (HES-SO)
, La Chaux-de-Fonds CH-2300, Switzerland
a)
Electronic mail: [email protected].
b)
Present address: Louisiana Accelerator Center and Department of Physics, University of Louisiana at Lafayette, Lafayette, LA 70506 USA.
J. Appl. Phys. 122, 045304 (2017)
Article history
Received:
April 05 2017
Accepted:
July 13 2017
Citation
Anna Krammer, Arnaud Magrez, Wolfgang A. Vitale, Piotr Mocny, Patrick Jeanneret, Edouard Guibert, Harry J. Whitlow, Adrian M. Ionescu, Andreas Schüler; Elevated transition temperature in Ge doped VO2 thin films. J. Appl. Phys. 28 July 2017; 122 (4): 045304. https://doi.org/10.1063/1.4995965
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