A high-density plasma in a pin-to-pin configuration was sustained in liquid organosilicon precursors (hexamethyldisiloxane, tetraethyl orthosilicate, and tetramethylcyclotetrasiloxane) by the application of a high-voltage at a frequency of 1 kHz and a duty cycle of 30%. For all organosilicon precursors investigated, the current-voltage characteristics revealed a spark mode, with typical discharge duration of about 50 ns. Both the number of microdischarges and the total amount of charges per microdischarge increased with the amplitude of the applied voltage. The optical emission spectroscopy revealed strong emission from the C2 Swan system along with H I, Si I, and O I emission lines, indicating very high fragmentation levels of the organosilicon precursors upon discharge ignition. This was confirmed by Transmission Electron Microscopy and Energy-Dispersive X-ray spectroscopy indicating the formation of amorphous silicon oxycarbide nanoparticles. However, W I emission lines as well as W crystalline nanoparticles could also be seen; a feature ascribed to plasma-electrode interactions.
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28 December 2017
Research Article|
December 22 2017
Nanoparticle synthesis by high-density plasma sustained in liquid organosilicon precursors
R. K. Gangwar
;
R. K. Gangwar
Département de Physique, Université de Montréal
, C.P. 6128 Succ. Centre-Ville, Montréal, Québec H3C 3J7, Canada
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A. Hamdan;
A. Hamdan
Département de Physique, Université de Montréal
, C.P. 6128 Succ. Centre-Ville, Montréal, Québec H3C 3J7, Canada
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L. Stafford
L. Stafford
a)
Département de Physique, Université de Montréal
, C.P. 6128 Succ. Centre-Ville, Montréal, Québec H3C 3J7, Canada
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a)
Author to whom correspondence should be addressed: luc.stafford@umontreal.ca
J. Appl. Phys. 122, 243301 (2017)
Article history
Received:
September 25 2017
Accepted:
November 25 2017
Citation
R. K. Gangwar, A. Hamdan, L. Stafford; Nanoparticle synthesis by high-density plasma sustained in liquid organosilicon precursors. J. Appl. Phys. 28 December 2017; 122 (24): 243301. https://doi.org/10.1063/1.5006479
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