We report a systematic study of high quality GaAs growths on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Various types of dislocation filter layers and growth temperatures of initial GaAs layer were investigated to reduce the threading dislocation densities in GaAs on GaP/Si. Electron channeling contrast imaging techniques revealed that an optimized GaAs buffer layer with thermal cycle annealing and InGaAs/GaAs dislocation filter layers has a threading dislocation density of 7.2 × 106 cm−2, which is a factor of 40 lower than an unoptimized GaAs buffer. The root-mean-square surface roughness was greatly decreased from 7.8 nm to 2.9 nm after the optimization process. A strong enhancement in photoluminescence intensity indicates that the optimized GaAs template grown on on-axis (001) GaP/Si substrates is a promising virtual substrate for Si-based optoelectronic devices.
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14 December 2017
Research Article|
December 12 2017
Low threading dislocation density GaAs growth on on-axis GaP/Si (001)
Daehwan Jung;
Daehwan Jung
a)
1
Institute for Energy Efficiency, University of California Santa Barbara
, Santa Barbara, California 93106, USA
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Patrick G. Callahan;
Patrick G. Callahan
2
Materials Department, University of California Santa Barbara
, Santa Barbara, California 93106, USA
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Bongki Shin;
Bongki Shin
1
Institute for Energy Efficiency, University of California Santa Barbara
, Santa Barbara, California 93106, USA
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Kunal Mukherjee;
Kunal Mukherjee
2
Materials Department, University of California Santa Barbara
, Santa Barbara, California 93106, USA
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Arthur C. Gossard;
Arthur C. Gossard
1
Institute for Energy Efficiency, University of California Santa Barbara
, Santa Barbara, California 93106, USA
2
Materials Department, University of California Santa Barbara
, Santa Barbara, California 93106, USA
3
Department of Electrical and Computer Engineering, University of California Santa Barbara
, Santa Barbara, California 93106, USA
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John E. Bowers
John E. Bowers
1
Institute for Energy Efficiency, University of California Santa Barbara
, Santa Barbara, California 93106, USA
2
Materials Department, University of California Santa Barbara
, Santa Barbara, California 93106, USA
3
Department of Electrical and Computer Engineering, University of California Santa Barbara
, Santa Barbara, California 93106, USA
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Daehwan Jung
1,a)
Patrick G. Callahan
2
Bongki Shin
1
Kunal Mukherjee
2
Arthur C. Gossard
1,2,3
John E. Bowers
1,2,3
1
Institute for Energy Efficiency, University of California Santa Barbara
, Santa Barbara, California 93106, USA
2
Materials Department, University of California Santa Barbara
, Santa Barbara, California 93106, USA
3
Department of Electrical and Computer Engineering, University of California Santa Barbara
, Santa Barbara, California 93106, USA
a)
E-mail: [email protected]
J. Appl. Phys. 122, 225703 (2017)
Article history
Received:
August 24 2017
Accepted:
November 27 2017
Citation
Daehwan Jung, Patrick G. Callahan, Bongki Shin, Kunal Mukherjee, Arthur C. Gossard, John E. Bowers; Low threading dislocation density GaAs growth on on-axis GaP/Si (001). J. Appl. Phys. 14 December 2017; 122 (22): 225703. https://doi.org/10.1063/1.5001360
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