Disorder induced gap states as a cause of threshold voltage instabilities in Al₂O₃/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors Available to Purchase

We proposed that the disorder induced gap states (DIGS) can be responsible for the threshold voltage (V_th) instability in Al₂O₃/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors. In order to verify this hypothesis, we performed the theoretical calculations of the capacitance voltage (C-V) curves for the Al₂O₃/AlGaN/GaN structures using the DIGS model and compared them with measured ones. We found that the experimental C-V curves with a complex hysteresis behavior varied with the maximum forward bias and the sweeping rate can be well reproduced theoretically by assuming a particular distribution in energy and space of the DIGS continuum near the Al₂O₃/AlGaN interface, i.e., a U-shaped energy density distribution and exponential depth decay from the interface into Al₂O₃ layer (up to 4 nm), as well as suitable DIGS capture cross sections (the order of magnitude of 10⁻¹⁵cm²). Finally, we showed that the DIGS model can also explain the negative bias induced threshold voltage instability. We believe that these results should be critical for the successful development of the passivation techniques, which allows to minimize the V_th instability related effects.