The reported Vertical Organic Field Effect Transistors (VOFETs) show either superior current and switching speeds or well-behaved transistor performance, especially saturation in the output characteristics. Through the study of the relationship between the device architecture or dimensions and the device performance, we find that achieving a saturation regime in the output characteristics requires that the device operates in the injection limited regime. In current structures, the existence of the injection limited regime depends on the source's injection barrier as well as on the buried semiconductor layer thickness. To overcome the injection limit imposed by the necessity of injection barrier, we suggest a new architecture to realize VOFETs. This architecture shows better gate control and is independent of the injection barrier at the source, thus allowing for several A cm−2 for a semiconductor having a mobility value of 0.1 cm2 V−1 s−1.
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21 November 2017
Research Article|
November 21 2017
Removing the current-limit of vertical organic field effect transistors
Gil Sheleg
;
Gil Sheleg
1
Sara and Moshe Zisapel Nano-Electronic Center, Department of Electrical Engineering, Technion-Israel Institute of Technology
, Haifa 32000, Israel
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Michael Greenman;
Michael Greenman
1
Sara and Moshe Zisapel Nano-Electronic Center, Department of Electrical Engineering, Technion-Israel Institute of Technology
, Haifa 32000, Israel
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Bjorn Lussem;
Bjorn Lussem
2
Department of Physics, Kent State University
, Kent, Ohio 44242, USA
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Nir Tessler
Nir Tessler
a)
1
Sara and Moshe Zisapel Nano-Electronic Center, Department of Electrical Engineering, Technion-Israel Institute of Technology
, Haifa 32000, Israel
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Gil Sheleg
1
Michael Greenman
1
Bjorn Lussem
2
Nir Tessler
1,a)
1
Sara and Moshe Zisapel Nano-Electronic Center, Department of Electrical Engineering, Technion-Israel Institute of Technology
, Haifa 32000, Israel
2
Department of Physics, Kent State University
, Kent, Ohio 44242, USA
a)
Author to whom correspondence should be addressed: [email protected]
J. Appl. Phys. 122, 195502 (2017)
Article history
Received:
September 19 2017
Accepted:
October 28 2017
Citation
Gil Sheleg, Michael Greenman, Bjorn Lussem, Nir Tessler; Removing the current-limit of vertical organic field effect transistors. J. Appl. Phys. 21 November 2017; 122 (19): 195502. https://doi.org/10.1063/1.5005800
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