The reported Vertical Organic Field Effect Transistors (VOFETs) show either superior current and switching speeds or well-behaved transistor performance, especially saturation in the output characteristics. Through the study of the relationship between the device architecture or dimensions and the device performance, we find that achieving a saturation regime in the output characteristics requires that the device operates in the injection limited regime. In current structures, the existence of the injection limited regime depends on the source's injection barrier as well as on the buried semiconductor layer thickness. To overcome the injection limit imposed by the necessity of injection barrier, we suggest a new architecture to realize VOFETs. This architecture shows better gate control and is independent of the injection barrier at the source, thus allowing for several A cm−2 for a semiconductor having a mobility value of 0.1 cm2 V−1 s−1.
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Research Article| November 21 2017
Removing the current-limit of vertical organic field effect transistors
Gil Sheleg ;
Gil Sheleg, Michael Greenman, Bjorn Lussem, Nir Tessler; Removing the current-limit of vertical organic field effect transistors. J. Appl. Phys. 21 November 2017; 122 (19): 195502. https://doi.org/10.1063/1.5005800
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