We study the electroluminescence (EL) emission of purely n-doped resonant tunneling diodes in a wide temperature range. The paper demonstrates that the EL originates from impact ionization and radiative recombination in the extended collector region of the tunneling device. Bistable current-voltage response and EL are detected and their respective high and low states are tuned under varying temperature. The bistability of the EL intensity can be switched from direct to inverted with respect to the tunneling current and the optical on/off ratio can be enhanced with increasing temperature. One order of magnitude amplification of the optical on/off ratio can be attained compared to the electrical one. Our observation can be explained by an interplay of moderate peak-to-valley current ratios, large resonance voltages, and electron energy loss mechanisms, and thus, could be applied as an alternative route towards optoelectronic applications of tunneling devices.
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Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes
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21 October 2017
Research Article|
October 17 2017
Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes
F. Hartmann;
F. Hartmann
1
Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg
, Am Hubland, D-97074 Würzburg, Germany
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A. Pfenning;
A. Pfenning
1
Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg
, Am Hubland, D-97074 Würzburg, Germany
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M. Rebello Sousa Dias
;
M. Rebello Sousa Dias
2
Departamento de Física, Universidade Federal de São Carlos
, 13565-905 São Carlos, SP, Brazil
3Department of Physics, Gottwald Center for the Sciences,
University of Richmond
, Richmond, Virginia 23173, USA
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F. Langer;
F. Langer
1
Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg
, Am Hubland, D-97074 Würzburg, Germany
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S. Höfling;
S. Höfling
1
Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg
, Am Hubland, D-97074 Würzburg, Germany
4
SUPA, School of Physics and Astronomy, University of St. Andrews
, St. Andrews KY16 9SS, United Kingdom
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M. Kamp;
M. Kamp
1
Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg
, Am Hubland, D-97074 Würzburg, Germany
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L. Worschech;
L. Worschech
1
Technische Physik and Wilhelm Conrad Röntgen Research Center for Complex Material Systems, Physikalisches Institut, Universität Würzburg
, Am Hubland, D-97074 Würzburg, Germany
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L. K. Castelano;
L. K. Castelano
2
Departamento de Física, Universidade Federal de São Carlos
, 13565-905 São Carlos, SP, Brazil
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G. E. Marques
;
G. E. Marques
2
Departamento de Física, Universidade Federal de São Carlos
, 13565-905 São Carlos, SP, Brazil
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V. Lopez-Richard
V. Lopez-Richard
2
Departamento de Física, Universidade Federal de São Carlos
, 13565-905 São Carlos, SP, Brazil
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J. Appl. Phys. 122, 154502 (2017)
Article history
Received:
July 04 2017
Accepted:
October 01 2017
Citation
F. Hartmann, A. Pfenning, M. Rebello Sousa Dias, F. Langer, S. Höfling, M. Kamp, L. Worschech, L. K. Castelano, G. E. Marques, V. Lopez-Richard; Temperature tuning from direct to inverted bistable electroluminescence in resonant tunneling diodes. J. Appl. Phys. 21 October 2017; 122 (15): 154502. https://doi.org/10.1063/1.4994099
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