Minority carrier diffusion lengths and lifetimes were determined for p-type Ga(1-x)InxAs with an In-content of 0 ≤ x ≤ 0.53 by cathodoluminescence and time-resolved photoluminescence measurements respectively under low injection conditions; the resulting minority carrier mobilities are also reported. Highly p-doped samples (3 × 1018 cm−3) demonstrate a constant minority carrier diffusion length of (5.0 ± 0.7) μm and a constant lifetime of (3.7 ± 0.7) ns for an In-content up to 21%. Lower doped samples (3 × 1017 cm−3), on the other hand, show an increase in minority carrier diffusion length and lifetime with In-content from (6.3 ± 0.2) μm and (6.2 ± 0.5) ns respectively for GaAs to (14 ± 2) μm and (24.4 ± 0.5) ns respectively for Ga0.79In0.21As. Increasing the In-content to 53% results in a drop in the minority carrier diffusion length independently of the p-doping concentration .This is interpreted as a change in the energy of the Shockley-Read-Hall trap levels within the bandgap as a function of indium concentration.
Skip Nav Destination
Article navigation
21 September 2017
Research Article|
September 19 2017
Minority carrier diffusion length, lifetime and mobility in p-type GaAs and GaInAs
M. Niemeyer
;
M. Niemeyer
a)
1
Fraunhofer Institute for Solar Energy Systems (ISE)
, Heidenhofstraße 2, 79110 Freiburg, Germany
Search for other works by this author on:
J. Ohlmann;
J. Ohlmann
1
Fraunhofer Institute for Solar Energy Systems (ISE)
, Heidenhofstraße 2, 79110 Freiburg, Germany
Search for other works by this author on:
A. W. Walker
;
A. W. Walker
b)
1
Fraunhofer Institute for Solar Energy Systems (ISE)
, Heidenhofstraße 2, 79110 Freiburg, Germany
Search for other works by this author on:
P. Kleinschmidt;
P. Kleinschmidt
2
Technische Universität Ilmenau
, Institut für Physik, 98693 Ilmenau, Germany
Search for other works by this author on:
R. Lang;
R. Lang
1
Fraunhofer Institute for Solar Energy Systems (ISE)
, Heidenhofstraße 2, 79110 Freiburg, Germany
Search for other works by this author on:
T. Hannappel;
T. Hannappel
2
Technische Universität Ilmenau
, Institut für Physik, 98693 Ilmenau, Germany
Search for other works by this author on:
F. Dimroth
;
F. Dimroth
1
Fraunhofer Institute for Solar Energy Systems (ISE)
, Heidenhofstraße 2, 79110 Freiburg, Germany
Search for other works by this author on:
D. Lackner
D. Lackner
1
Fraunhofer Institute for Solar Energy Systems (ISE)
, Heidenhofstraße 2, 79110 Freiburg, Germany
Search for other works by this author on:
a)
Author to whom correspondence should be addressed: markus.niemeyer@ise.fhg.de.
b)
Current address: National Research Council Canada, 1200 Montreal Road, M-50, Ottawa, Ontario K1A 0R6, Canada.
J. Appl. Phys. 122, 115702 (2017)
Article history
Received:
April 21 2017
Accepted:
August 25 2017
Citation
M. Niemeyer, J. Ohlmann, A. W. Walker, P. Kleinschmidt, R. Lang, T. Hannappel, F. Dimroth, D. Lackner; Minority carrier diffusion length, lifetime and mobility in p-type GaAs and GaInAs. J. Appl. Phys. 21 September 2017; 122 (11): 115702. https://doi.org/10.1063/1.5002630
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00