Minority carrier diffusion lengths and lifetimes were determined for p-type Ga(1-x)InxAs with an In-content of 0 ≤ x ≤ 0.53 by cathodoluminescence and time-resolved photoluminescence measurements respectively under low injection conditions; the resulting minority carrier mobilities are also reported. Highly p-doped samples (3 × 1018 cm−3) demonstrate a constant minority carrier diffusion length of (5.0 ± 0.7) μm and a constant lifetime of (3.7 ± 0.7) ns for an In-content up to 21%. Lower doped samples (3 × 1017 cm−3), on the other hand, show an increase in minority carrier diffusion length and lifetime with In-content from (6.3 ± 0.2) μm and (6.2 ± 0.5) ns respectively for GaAs to (14 ± 2) μm and (24.4 ± 0.5) ns respectively for Ga0.79In0.21As. Increasing the In-content to 53% results in a drop in the minority carrier diffusion length independently of the p-doping concentration .This is interpreted as a change in the energy of the Shockley-Read-Hall trap levels within the bandgap as a function of indium concentration.
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21 September 2017
Research Article|
September 19 2017
Minority carrier diffusion length, lifetime and mobility in p-type GaAs and GaInAs
M. Niemeyer
;
M. Niemeyer
a)
1
Fraunhofer Institute for Solar Energy Systems (ISE)
, Heidenhofstraße 2, 79110 Freiburg, Germany
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J. Ohlmann;
J. Ohlmann
1
Fraunhofer Institute for Solar Energy Systems (ISE)
, Heidenhofstraße 2, 79110 Freiburg, Germany
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A. W. Walker
;
A. W. Walker
b)
1
Fraunhofer Institute for Solar Energy Systems (ISE)
, Heidenhofstraße 2, 79110 Freiburg, Germany
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P. Kleinschmidt;
P. Kleinschmidt
2
Technische Universität Ilmenau
, Institut für Physik, 98693 Ilmenau, Germany
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R. Lang;
R. Lang
1
Fraunhofer Institute for Solar Energy Systems (ISE)
, Heidenhofstraße 2, 79110 Freiburg, Germany
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T. Hannappel;
T. Hannappel
2
Technische Universität Ilmenau
, Institut für Physik, 98693 Ilmenau, Germany
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F. Dimroth
;
F. Dimroth
1
Fraunhofer Institute for Solar Energy Systems (ISE)
, Heidenhofstraße 2, 79110 Freiburg, Germany
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D. Lackner
D. Lackner
1
Fraunhofer Institute for Solar Energy Systems (ISE)
, Heidenhofstraße 2, 79110 Freiburg, Germany
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a)
Author to whom correspondence should be addressed: markus.niemeyer@ise.fhg.de.
b)
Current address: National Research Council Canada, 1200 Montreal Road, M-50, Ottawa, Ontario K1A 0R6, Canada.
J. Appl. Phys. 122, 115702 (2017)
Article history
Received:
April 21 2017
Accepted:
August 25 2017
Citation
M. Niemeyer, J. Ohlmann, A. W. Walker, P. Kleinschmidt, R. Lang, T. Hannappel, F. Dimroth, D. Lackner; Minority carrier diffusion length, lifetime and mobility in p-type GaAs and GaInAs. J. Appl. Phys. 21 September 2017; 122 (11): 115702. https://doi.org/10.1063/1.5002630
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