Field-effect mobility of a two dimensional electron gas in an n–channel of Si-SiO₂ MOS structure with due consideration of some practical features

The field-effect mobility characteristics of a non-degenerate ensemble of a two dimensional electron gas for interaction with acoustic mode lattice vibrations in the Si-SiO₂ MOS structure at the high surface electric fields are calculated here for the low and high temperature cases. The calculation takes due account of some features which are usually neglected. These include the effects of (i) the transverse component of the phonon wave vector, (ii) the realistic model of the infinite triangular potential well along the transverse direction, while applying the momentum conservation approximation, and (iii) the full form of the phonon distribution function at low temperatures. The results seem to be interesting in that they are significantly different from what follows from other theories that neglect the effects of the above features. Moreover, the agreement between the results which are obtained here with the experimental data seems to be significantly better. The scope for further refinement of the present theory has been discussed.