The dislocation morphology and lattice distortion, including the tilting and twisting of lattice planes, at the Na-flux GaN/seed-GaN interface were investigated using transmission electron microscopy (TEM) and position-dependent nanobeam X-ray diffraction (nanoXRD). The results revealed that the dislocation morphology and lattice distortion in Na-flux GaN at the initial growth stage are strongly influenced by the seed-GaN surface morphology and the growth mode of Na-flux GaN. From the TEM results, one can observe that the formation of dislocation-related etch pits (DREPs) on the seed-GaN surface and the three-dimensional (3D) growth mode for Na-flux GaN give rise to the bending and lateral propagation of dislocations penetrating from the seed-GaN to the Na-flux GaN. This simultaneously results in homogenization of the GaN crystal domain structure as confirmed by nanoXRD. The mechanism responsible for the bending and lateral propagation of dislocations by the formation of DREPs and the 3D growth mode for the Na-flux GaN and the correlation between the dislocation morphology and the lattice distortion are discussed on the basis of TEM and nanoXRD results.
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14 September 2017
Research Article|
September 14 2017
Control of dislocation morphology and lattice distortion in Na-flux GaN crystals
S. Takeuchi
;
S. Takeuchi
a)
1
Graduate School of Engineering Science, Osaka University
, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Y. Mizuta;
Y. Mizuta
1
Graduate School of Engineering Science, Osaka University
, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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M. Imanishi;
M. Imanishi
2
Graduate School of Engineering, Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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M. Imade;
M. Imade
2
Graduate School of Engineering, Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Y. Mori;
Y. Mori
2
Graduate School of Engineering, Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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K. Sumitani;
K. Sumitani
3
Research and Utilization Division, Japan Synchrotron Radiation Research Institute (JASRI)
, Sayo, Hyogo 679-5198, Japan
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Y. Imai;
Y. Imai
3
Research and Utilization Division, Japan Synchrotron Radiation Research Institute (JASRI)
, Sayo, Hyogo 679-5198, Japan
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S. Kimura
;
S. Kimura
3
Research and Utilization Division, Japan Synchrotron Radiation Research Institute (JASRI)
, Sayo, Hyogo 679-5198, Japan
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S. Takeuchi
1,a)
Y. Mizuta
1
M. Imanishi
2
M. Imade
2
Y. Mori
2
K. Sumitani
3
Y. Imai
3
S. Kimura
3
A. Sakai
1,b)
1
Graduate School of Engineering Science, Osaka University
, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
2
Graduate School of Engineering, Osaka University
, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
3
Research and Utilization Division, Japan Synchrotron Radiation Research Institute (JASRI)
, Sayo, Hyogo 679-5198, Japan
a)
Electronic mail: [email protected]
b)
Electronic mail: [email protected]
J. Appl. Phys. 122, 105303 (2017)
Article history
Received:
June 10 2017
Accepted:
August 26 2017
Citation
S. Takeuchi, Y. Mizuta, M. Imanishi, M. Imade, Y. Mori, K. Sumitani, Y. Imai, S. Kimura, A. Sakai; Control of dislocation morphology and lattice distortion in Na-flux GaN crystals. J. Appl. Phys. 14 September 2017; 122 (10): 105303. https://doi.org/10.1063/1.4989647
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