In this work, the breakdown transients of - and HfO2-based metal-insulator-metal (MIM) stacks with the same oxide thickness and identical metal electrodes were compared. Their connection with the thermal properties of the materials was investigated using alternative experimental setups. The differences and similarities between these transients in the fast and progressive breakdown regimes were assessed. According to the obtained results, exhibits longer breakdown transients than HfO2 and requires a higher voltage to initiate a very fast current runaway across the dielectric film. This distinctive behavior is ascribed to the higher thermal conductivity of . Overall results link the breakdown process to the thermal properties of the oxides under test rather than to dissipation effects occurring at the metal electrodes.
References
1.
S.
Lombardo
, J. H.
Stathis
, B. P.
Linder
, K. L.
Pey
, F.
Palumbo
, and C. H.
Tung
, J. Appl. Phys.
98
, 121301
(2005
).2.
J. H.
Stathis
, IBM J. Res. Dev.
46
, 265
(2002
).3.
B.
Linder
, S.
Lombardo
, J.
Stathis
, A.
Vayshenker
, and D.
Frank
, IEEE Electron Device Lett.
23
, 661
(2002
).4.
S.
Lombardo
, J. H.
Stathis
, and B. P.
Linder
, Phys. Rev. Lett.
90
, 167601
(2003
).5.
R.
Pagano
, S.
Lombardo
, F.
Palumbo
, P.
Kirsch
, S.
Krishnan
, C.
Young
, R.
Choi
, G.
Bersuker
, and J.
Stathis
, Microelectron. Reliab.
48
, 1759
(2008
).6.
R.
Waser
, R.
Dittmann
, G.
Staikov
, and K.
Szot
, Adv. Mater.
21
, 2632
(2009
).7.
D.
Ielmini
, R.
Bruchhaus
, and R.
Waser
, Phase Transitions
84
, 570
(2011
).8.
F.
Palumbo
, S.
Lombardo
, and M.
Eizenberg
, J. Appl. Phys.
115
, 224101
(2014
).9.
F.
Palumbo
, M.
Eizenberg
, and S.
Lombardo
, in 2015 IEEE International Reliability Physics Symposium
(IEEE, 2015
), pp. 5A.1.1
–5A.1.6
.10.
F.
Palumbo
, P.
Shekhter
, K.
Cohen Weinfeld
, and M.
Eizenberg
, Appl. Phys. Lett.
107
, 122901
(2015
).11.
E.
Miranda
, in 45th Annual IEEE International Reliability Physics Symposium Proceedings
(IEEE
, 2007
), pp. 572
–573
.12.
F.
Palumbo
, S.
Lombardo
, J.
Stathis
, V.
Narayanan
, F.
McFeely
, and J.
Yurkas
, in IEEE International Reliability Physics Symposium
(IEEE
, 2004
), pp. 122
–125
.13.
F.
Palumbo
, S.
Lombardo
, and M.
Eizenberg
, Microelectron. Reliab.
56
, 22
(2016
).14.
C. H.
Tung
, K. L.
Pey
, L. J.
Tang
, M. K.
Radhakrishnan
, W. H.
Lin
, F.
Palumbo
, and S.
Lombardo
, Appl. Phys. Lett.
83
, 2223
(2003
).15.
E. Y.
Wu
and J.
Suñé
, Microelectron. Reliab.
45
, 1809
(2005
).16.
A.
Haggag
, N.
Liu
, D.
Menke
, and M.
Moosa
, Microelectron. Reliab.
45
, 1855
(2005
).17.
E. Y.
Wu
and J.
Suñé
, IEEE Trans. Electron Devices
56
, 1433
(2009
).18.
T.
Pompl
and M.
Röhner
, Microelectron. Reliab.
45
, 1835
(2005
).19.
R.-P.
Vollertsen
and E.
Wu
, Microelectron. Reliab.
44
, 909
(2004
).20.
A.
Kerber
, L.
Pantisano
, A.
Veloso
, G.
Groeseneken
, and M.
Kerber
, Microelectron. Reliab.
47
, 513
(2007
).21.
W.-T. K.
Chien
, Y. A.
Zhao
, M.
Zhang
, and M.
Li
, Int. J. Reliab., Qual. Saf. Eng.
22
, 1550006
(2015
).22.
E.
Miranda
, C.
Mahata
, T.
Das
, and C.
Maiti
, Microelectron. Reliab.
51
, 1535
(2011
).23.
F.
Palumbo
and M.
Eizenberg
, J. Appl. Phys.
115
, 014106
(2014
).24.
See https://www.nist.gov/srd/srd-catalog for NIST SRD Catalog—NIST.
25.
M.
Panzer
, M.
Shandalov
, J.
Rowlette
, Y.
Oshima
, Yi.
Wei Chen
, P.
McIntyre
, and K.
Goodson
, IEEE Electron Device Lett.
30
, 1269
(2009
).26.
R.
Degraeve
, T.
Kauerauf
, M.
Cho
, M.
Zahid
, L.
Ragnarsson
, D.
Brunco
, B.
Kaczer
, P.
Roussel
, S.
De Gendt
, and G.
Groeseneken
, IEEE Int. Electron Devices Meet.
2005
, 408
–411
(2006
).27.
R.
Degraeve
, B.
Kaczer
, and G.
Groeseneken
, Microelectron. Reliab.
39
, 1445
(1999
).28.
F.
Palumbo
, G.
Condorelli
, S.
Lombardo
, K.
Pey
, C.
Tung
, and L.
Tang
, Microelectron. Reliab.
45
, 845
(2005
).29.
E.
Miranda
, Appl. Phys. Lett.
91
, 053502
(2007
).30.
F.
Palumbo
, E.
Miranda
, G.
Ghibaudo
, and V.
Jousseaume
, IEEE Electron Device Lett.
33
, 1057
(2012
).31.
Supriyo
Datta
, Electronic Transport in Mesoscopic Systems
, 1st ed., Cambridge Studies in Semiconductor Physics and Microelectronic Engineering (Cambridge University Press
, 1997
), p. 377
.32.
E.
Miranda
, C.
Walczyk
, C.
Wenger
, and T.
Schroeder
, IEEE Electron Device Lett.
31
, 609
(2010
).33.
F.
Palumbo
, E.
Miranda
, G.
Ghibaudo
, and V.
Jousseaume
, ECS Trans.
39
, 187
(2011
).34.
X.
Lian
, S.
Long
, C.
Cagli
, J.
Buckley
, E.
Miranda
, M.
Liu
, and J.
Sune
, in 13th International Conference on Ultimate Integration on Silicon (ULIS)
(IEEE, 2012
), pp. 101
–104
.35.
S.
Takagi
, N.
Yasuda
, and A.
Toriumi
, IEEE Trans. Electron Devices
46
, 335
(1999
).36.
P. E.
Blöchl
and J. H.
Stathis
, Phys. Rev. Lett.
83
, 372
(1999
).37.
B.
Sorée
, W.
Magnus
, and W.
Schoenmaker
, Phys. Lett. A
310
, 322
(2003
).38.
B.
Sorée
, W.
Magnus
, and W.
Schoenmaker
, Semicond. Sci. Technol.
19
, S235
(2004
).© 2017 Author(s).
2017
Author(s)
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