In this work, the breakdown transients of - and HfO2-based metal-insulator-metal (MIM) stacks with the same oxide thickness and identical metal electrodes were compared. Their connection with the thermal properties of the materials was investigated using alternative experimental setups. The differences and similarities between these transients in the fast and progressive breakdown regimes were assessed. According to the obtained results, exhibits longer breakdown transients than HfO2 and requires a higher voltage to initiate a very fast current runaway across the dielectric film. This distinctive behavior is ascribed to the higher thermal conductivity of . Overall results link the breakdown process to the thermal properties of the oxides under test rather than to dissipation effects occurring at the metal electrodes.
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7 March 2017
Research Article|
March 03 2017
Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials
S. Pazos
;
S. Pazos
1
Consejo Nacional de Investigaciones Científicas y Técnicas
, Godoy Cruz 2290 (C1425FQB), Buenos Aires, Argentina
2GAIANN,
Comisión Nacional de Energía Atómica
, Gral. Paz 1499 (1650), San Martín, Provincia de Buenos Aires, Argentina
3Departamento de Ingeniería Electrónica, Facultad Regional Buenos Aires,
Universidad Tecnológica Nacional
, Medrano 951 (C1179AAQ), Buenos Aires, Argentina
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F. Aguirre
;
F. Aguirre
1
Consejo Nacional de Investigaciones Científicas y Técnicas
, Godoy Cruz 2290 (C1425FQB), Buenos Aires, Argentina
2GAIANN,
Comisión Nacional de Energía Atómica
, Gral. Paz 1499 (1650), San Martín, Provincia de Buenos Aires, Argentina
3Departamento de Ingeniería Electrónica, Facultad Regional Buenos Aires,
Universidad Tecnológica Nacional
, Medrano 951 (C1179AAQ), Buenos Aires, Argentina
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E. Miranda;
E. Miranda
4Departament d'Enginyeria Electrònica,
Universitat Autònoma de Barcelona
, Bellaterra 08193, Spain
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S. Lombardo;
S. Lombardo
5Istituto per la Microelettronica e Microsistemi (IMM),
Consiglio Nazionale delle Ricerche (CNR)
, Zona Industriale, Ottava Strada, 5, 95121 Catania, Italy
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F. Palumbo
F. Palumbo
a)
1
Consejo Nacional de Investigaciones Científicas y Técnicas
, Godoy Cruz 2290 (C1425FQB), Buenos Aires, Argentina
2GAIANN,
Comisión Nacional de Energía Atómica
, Gral. Paz 1499 (1650), San Martín, Provincia de Buenos Aires, Argentina
3Departamento de Ingeniería Electrónica, Facultad Regional Buenos Aires,
Universidad Tecnológica Nacional
, Medrano 951 (C1179AAQ), Buenos Aires, Argentina
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a)
Electronic mail: [email protected]
J. Appl. Phys. 121, 094102 (2017)
Article history
Received:
November 24 2016
Accepted:
February 18 2017
Citation
S. Pazos, F. Aguirre, E. Miranda, S. Lombardo, F. Palumbo; Comparative study of the breakdown transients of thin Al2O3 and HfO2 films in MIM structures and their connection with the thermal properties of materials. J. Appl. Phys. 7 March 2017; 121 (9): 094102. https://doi.org/10.1063/1.4977851
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