This paper describes a metal-insulator-semiconductor (MIS) capacitor with flat capacitance voltage characteristics and a small quadratic voltage capacitance coefficient. The device characteristics resemble a metal-insulator-metal diode except that here the capacitance depends on illumination and exhibits a strong frequency dispersion. The device incorporates Fe nanoparticles (NPs), mixed with SrF2, which are embedded in an insulator stack of SiO2 and HfO2. Positively charged Fe ions induce dipole type traps with an electronic polarization that is enhanced by photogenerated carriers injected from the substrate and/or by inter nanoparticle exchange of carriers. The obtained characteristics are compared with those of five other MIS structures: two based on Fe NPs, one with and the other without SrF2 sublayers. Additionally, devices contain Co NPs embedded in SrF2 sublayers, and finally, two structures have no NPs, with one based on a stack of SiO2 and HfO2 and the other which also includes SrF2. Only structures containing Fe NPs, which are incorporated into SrF2, yield a voltage independent capacitance, the level of which can be changed by illumination. These properties are essential in radio frequency/analog mixed signal applications.

1.
I.
Gutierrez
,
J.
Meléndez
, and
E.
Hernández
,
Design and Characterization of Integrated Varactors for RF Applications
(
John Wiley
,
West Sussex, England
,
2006
).
2.
T.
Saxena
,
S. L.
Rumyantsev
,
P. S.
Dutta
, and
M.
Shur
,
Semicond. Sci. Technol.
29
,
025002
(
2014
).
3.
D.
Ciplys
,
V. S.
Chivukula
,
A.
Sereika
,
R.
Rimeika
,
M. S.
Shur
,
X.
Hu
, and
R.
Gaska
,
Electron. Lett.
45
,
653
(
2009
).
4.
V. S.
Chivukula
,
D.
Ciplys
,
A.
Sereika
,
M. S.
Shur
,
J.
Yang
, and
R.
Gaska
,
Appl. Phys. Lett.
96
,
163504
(
2010
).
5.
P.
Dianat
,
R.
Prusak
,
A.
Persano
,
A.
Cola
,
F.
Quaranta
, and
B.
Nabet
,
IEEE Trans. Electron Devices
61
,
445
(
2014
).
6.
P.
Dianat
,
R. W.
Prusak
,
E.
Gallo
,
A.
Cola
,
A.
Persano
,
F.
Quaranta
, and
B.
Nabet
,
Appl. Phys. Lett.
100
,
153505
(
2012
).
7.
P.
Dianat
,
A.
Persano
,
F.
Quaranta
,
A.
Cola
, and
B.
Nabet
,
IEEE J. Sel. Top. Quantum Electron.
21
,
3800605
(
2015
).
8.
D.
Lopez
,
F.
Monsieur
, and
F.
Balestra
, in
Proceedings of the 26th International Conference on Microelectronics
, NIS, Serbia (
2008
).
9.
V.
Mikhelashvili
,
D.
Cristea
,
B.
Meyler
,
S.
Yofis
,
Y.
Shneider
,
G.
Atiya
,
T.
Cohen-Hyams
,
Y.
Kauffmann
,
W. D.
Kaplan
, and
G.
Eisenstein
,
J. Appl. Phys.
117
,
044503
(
2015
).
10.
V.
Mikhelashvili
,
R.
Padmanabhan
,
B.
Meyler
,
S.
Yofis
,
G.
Atiya
,
Z.
Cohen-Hyams
,
S.
Weindling
,
G.
Ankonina
,
J.
Salzman
,
W. D.
Kaplan
, and
G.
Eisenstein
,
J. Appl. Phys.
118
,
134504
(
2015
).
11.
J. M.
Gonzalez
,
N.
Delhote
,
D.
Baillargeat
,
S. P.
McGarry
, and
L.
Roy
,
Microwave Opt. Technol. Lett.
58
,
1926
(
2016
).
12.
C.
Lee
,
J.
Meteer
,
C.
Narayanan
, and
E.
Kan
,
J. Electron. Mater.
34
,
1
(
2005
).
13.
P.
Thangadurai
,
Y.
Lumelsky
,
M. S.
Silverstein
, and
W. D.
Kaplan
,
Mater. Charact.
59
,
1623
(
2008
).
14.
R.
Souda
,
E.
Asari
,
H.
Kawanowa
,
T.
Suzuki
, and
S.
Otani
,
Phys. Rev.
58
,
10054
(
1998
).
15.
E. J.
Moon
,
Y.
Xie
,
E. D.
Laird
,
D. J.
Keavney
,
C. Y.
Li
, and
S. J.
May
,
J. Am. Chem. Soc.
136
,
2224
(
2014
).
16.
F. J.
Berrya
,
X.
Rena
,
R.
Heapb
,
P.
Slaterb
, and
M. F.
Thomas
,
Solid State Commun.
134
,
621
(
2005
).
17.
K.
Iwauchi
,
Jpn. J. Appl. Phys.
10
,
1520
(
1971
).
18.
J. A.
Babcock
,
S. G.
Balster
,
A.
Pinto
,
D.
Dirnecker
,
P.
Steinmann
,
R.
Jumpertz
, and
B.
El-Kareh
,
IEEE Electron Device Lett.
22
,
230
(
2001
).
19.
S. B.
Chen
,
C. H.
Lai
,
A.
Chin
,
J. C.
Hsieh
, and
J.
Liu
,
IEEE Electron Device Lett.
23
,
185
(
2002
).
20.
X.
Yu
,
C.
Zhu
,
H.
Hu
,
A.
Chin
,
M. F.
Li
,
B. J.
Cho
,
D.-L.
Kwong
,
P. D.
Foo
, and
M. B.
Yu
,
IEEE Electron Device Lett.
24
,
63
(
2003
).
21.
M.-H.
Cho
,
Y. S.
Roh
,
C. N.
Whang
,
K.
Jeong
,
H. J.
Choi
,
S. W.
Nam
,
D.-H.
Ko
,
J. H.
Lee
,
N. I.
Lee
, and
K.
Fujihara
,
Appl. Phys. Lett.
81
,
1071
(
2002
).
22.
S. J.
Kim
,
B. J.
Cho
,
M.-F.
Li
,
S.-J.
Ding
,
C.
Zhu
,
M. B.
Yu
,
B.
Narayanan
,
A.
Chin
, and
D.-L.
Kwong
,
IEEE Electron Device Lett.
25
,
538
540
(
2004
).
23.
A. K.
Jonscher
,
Dielectric Relaxation in Solids
(
Chelsea Dielectrics Press
,
London
,
1983
).
24.
A. K.
Jonscher
,
J. Mater. Sci.
16
,
2037
(
1981
).
25.
V.
Mikhelashvili
,
G.
Eisenstein
,
V.
Garber
,
S.
Fainleib
,
G.
Bahir
,
D.
Ritter
,
M.
Orenstein
, and
A.
Peer
,
J. Appl. Phys
85
,
6873
(
1999
).
26.
Measurement, Instrumentation, and Sensors Handbook
, 2nd ed., edited by
J. G.
Webster
and
H.
Eren
(
Taylor and Francis Group
,
LLC
,
2014
).
27.
A. M.
Shaikh
,
S. S.
Bellad
, and
B. K.
Chougule
,
J. Magn. Magn. Mater.
195
,
384
(
1999
).
28.
K.-S.
Tan
,
S.
Kiriake
,
M.
de Wit
,
J. W.
Fattaruso
,
C.-Y.
Tsay
,
W. E.
Matthews
, and
R. K.
Hester
,
IEEE J. Solid-State Circuits
25
,
1318
(
1990
).
29.
D.
Edenfeld
,
A. B.
Kahng
,
M.
Rodgers
, and
Y.
Zorian
,
The International Technology Roadmap for Semiconductors
(
Semiconductor Industry Association
,
2003
).
30.
J.
Tao
,
C. Z.
Zhao
,
C.
Zhao
,
P.
Taechakumput
,
M.
Werner
,
S.
Taylor
, and
P. R.
Chalker
,
Materials
5
,
1005
(
2012
).
31.
V.
Mikhelashvili
,
B.
Meyler
,
M.
Garbrecht
,
T.
Cohen-Hyams
,
Y.
Roizin
,
M.
Lisiansky
,
W. D.
Kaplan
,
Y.
Salzman
, and
G.
Eisenstein
,
Microelectron. Eng.
88
,
964
(
2011
).
32.
S.
Tiwari
,
F.
Rana
,
K.
Chan
,
H.
Hanafi
,
C.
Wei
, and
D.
Buchanan
, in
Technical Digest—International Electron Devices Meeting
(
1995
), p.
521
.
33.
S.
Tiwari
,
F.
Rana
,
K.
Chan
,
L.
Shi
, and
H.
Hanafi
,
Appl. Phys. Lett
69
,
1232
(
1996
).
34.
E. H.
Nicollian
and
J. R.
Brews
,
MOS (Metal Oxide Semiconductor) Physics and Technology
(
Wiley-Interscience
,
2002
).
35.
E. H.
Nicollian
and
A.
Goetzberger
,
IEEE Trans. Electron Devices
12
,
108
(
1965
).
36.
S. C.
Watawe
,
B. D.
Sarwade
,
S. S.
Bellad
,
B. D.
Sutar
, and
B. K.
Chougule
,
J. Magn. Magn. Mater.
214
,
55
(
2000
).
37.
H.
Yu
,
H.
Liu
,
H.
Hao
,
L.
Guo
,
C.
Jin
,
Z.
Yu
, and
M.
Cao
,
Appl. Phys. Lett.
91
,
222911
(
2007
).
38.
N.
Sivakumar
,
A.
Narayanasamy
,
C. N.
Chinnasamy
, and
B.
Jeyadevan
,
J. Phys.: Condens. Matter.
19
,
386201
(
2007
).
39.
S. J.
Ding
,
H.
Hu
,
C.
Zhu
,
S. J.
Kim
,
X. F.
Yu
,
M. F.
Li
,
B. J.
Cho
,
D. S. H.
Chan
,
S. C.
Rustagi
,
M. B.
Yu
, and
A.
Chin
,
IEEE Trans. Electron Devices
51
,
886
(
2004
).
40.
M. B.
Reddy
and
P. V.
Reddy
,
J. Phys. D: Appl. Phys.
24
,
975
(
1991
).
41.
M. T.
Rahman
,
M.
Vargas
, and
C. V.
Ramana
,
J. Alloys Compd.
617
,
547
(
2014
).
42.
S.
Shwartz
,
M.
Segev
,
S.
Berger
,
E.
Zolotoyabko
, and
U.
El-Hanany
,
Phys. Rev. B
79
,
193202
(
2009
).
43.
K. F.
Young
and
H. P. R.
Frederikse
,
J. Phys. Chem. Ref. Data
2
,
313
(
1973
).
44.
S. M.
Sze
,
Physics of Semiconductor Devices
(
John Wiley & Sons
,
New York
,
1981
).
45.
R.
Padmanabhan
,
O.
Eyal
,
B.
Meyler
,
S.
Yofis
,
G.
Atiya
,
W. D.
Kaplan
,
V.
Mikhelashvili
, and
G.
Eisenstein
,
IEEE Trans. Nanotechnol.
15
,
492
(
2016
).
46.
A.
Bogusz
,
O. S.
Choudhary
,
I.
Skorupa
,
D.
Bürger
,
A.
Lawerenz
,
Y.
Lei
,
H.
Zeng
,
B.
Abendroth
,
H.
Stöcker
,
O. G.
Schmidt
, and
H.
Schmidt
,
Appl. Phys. Lett.
108
,
052103
(
2016
).
47.
C. S.
Chang
,
Applications of Metal-Insulator-Metal (MIM) Capacitors
(
International SEMATECH Technology Transfer
,
2000
).
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