Like most of the vertical transistors, the Patterned Source Vertical Organic Field Effect Transistor (PS-VOFET) does not exhibit saturation in the output characteristics. The importance of achieving a good saturation is demonstrated in a vertical organic light emitting transistor; however, this is critical for any application requiring the transistor to act as a current source. Thereafter, a 2D simulation tool was used to explain the physical mechanisms that prevent saturation as well as to suggest ways to overcome them. We found that by isolating the source facet from the drain-source electric field, the PS-VOFET architecture exhibits saturation. The process used for fabricating such saturation-enhancing structure is then described. The new device demonstrated close to an ideal saturation with only 1% change in the drain-source current over a 10 V change in the drain-source voltage.
Reaching saturation in patterned source vertical organic field effect transistors
Michael Greenman, Gil Sheleg, Chang-min Keum, Jonathan Zucker, Bjorn Lussem, Nir Tessler; Reaching saturation in patterned source vertical organic field effect transistors. J. Appl. Phys. 28 May 2017; 121 (20): 204503. https://doi.org/10.1063/1.4984053
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