In this paper, we investigate the effects of doping in the local structure of SnO2 by measuring the hyperfine interactions at impurity nuclei using the Time Differential Perturbed Gamma-Gamma Angular Correlation (TDPAC) method in addition to density functional theory simulations. The hyperfine field parameters have been probed as a function of the temperature in thin film samples. The experimental results reveal that 117Cd/In and 111In/Cd are incorporated and stabilized in the SnO2 lattice replacing the cationic site. Significant differences in the electric field gradient were observed from TDPAC measurements with both the probe nuclei. Furthermore, the absence of strongly damped spectra further indicates that implanted Cd atoms (for 117Cd/In probe nuclei measurements) easily occupy regular substitutional Sn sites with good stability. The simulated value for the electric field gradient obtained with the first oxygen neighbor removed is closer to the experimental value observed for 117Cd, which also indicates this configuration as stable and present in the sample.
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21 May 2017
Research Article|
May 18 2017
Cd and In-doping in thin film SnO2 Available to Purchase
Juliana Schell;
Juliana Schell
1
European Organization for Nuclear Research (CERN)
, CH-1211 Geneva, Switzerland
2
Institute for Materials Science and Center for Nanointegration, Duisburg-Essen (CENIDE), University of Duisburg-Essen
, 45141 Essen, Germany
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Doru C. Lupascu
;
Doru C. Lupascu
2
Institute for Materials Science and Center for Nanointegration, Duisburg-Essen (CENIDE), University of Duisburg-Essen
, 45141 Essen, Germany
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Artur Wilson Carbonari
;
Artur Wilson Carbonari
3
Instituto de Pesquisas Energéticas e Nucleares, Universidade de São Paulo
, 05508-000 São Paulo, Brazil
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Ronaldo Domingues Mansano;
Ronaldo Domingues Mansano
4
Escola Politécnica, Universidade de São Paulo
, 05508-010 São Paulo, Brazil
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Rafael. S. Freitas;
Rafael. S. Freitas
5
Instituto de Física, Universidade de São Paulo
, 05314-970 São Paulo, Brazil
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João Nuno Gonçalves
;
João Nuno Gonçalves
6
CICECO—Aveiro Institute of Materials and Departamento de Física, Universidade de Aveiro
, 3810-193 Aveiro, Portugal
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Thien Thanh Dang;
Thien Thanh Dang
7
Helmholtz-Institut für Strahlen-und Kernphysik, Universität Bonn
, Nussallee 14-16, 53115 Bonn, Germany
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Reiner Vianden
Reiner Vianden
7
Helmholtz-Institut für Strahlen-und Kernphysik, Universität Bonn
, Nussallee 14-16, 53115 Bonn, Germany
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Juliana Schell
1,2
Doru C. Lupascu
2
Artur Wilson Carbonari
3
Ronaldo Domingues Mansano
4
Rafael. S. Freitas
5
João Nuno Gonçalves
6
Thien Thanh Dang
7
ISOLDE collaboration
Reiner Vianden
7
1
European Organization for Nuclear Research (CERN)
, CH-1211 Geneva, Switzerland
2
Institute for Materials Science and Center for Nanointegration, Duisburg-Essen (CENIDE), University of Duisburg-Essen
, 45141 Essen, Germany
3
Instituto de Pesquisas Energéticas e Nucleares, Universidade de São Paulo
, 05508-000 São Paulo, Brazil
4
Escola Politécnica, Universidade de São Paulo
, 05508-010 São Paulo, Brazil
5
Instituto de Física, Universidade de São Paulo
, 05314-970 São Paulo, Brazil
6
CICECO—Aveiro Institute of Materials and Departamento de Física, Universidade de Aveiro
, 3810-193 Aveiro, Portugal
7
Helmholtz-Institut für Strahlen-und Kernphysik, Universität Bonn
, Nussallee 14-16, 53115 Bonn, Germany
J. Appl. Phys. 121, 195303 (2017)
Article history
Received:
November 08 2016
Accepted:
May 03 2017
Citation
Juliana Schell, Doru C. Lupascu, Artur Wilson Carbonari, Ronaldo Domingues Mansano, Rafael. S. Freitas, João Nuno Gonçalves, Thien Thanh Dang, ISOLDE collaboration, Reiner Vianden; Cd and In-doping in thin film SnO2. J. Appl. Phys. 21 May 2017; 121 (19): 195303. https://doi.org/10.1063/1.4983669
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