We report temperature (RT-150 K) and field dependent low frequency noise measurements on Ge n-FETs. Specifically, we delineate the temperature, field, and interfacial layer (GeON vs. GeO2) dependence of the gate overdrive index (β) on corresponding changes in volume interface trap density (Nit) and mobility (μ). For Nit < 1 × 1020 cm−3 eV−1, the dominant noise mechanism, number or mobility fluctuation, depends on the change in μ, but for Nit > 1 × 1020 cm−3eV−1 near the conduction band edge, changes in μ as well as Nit determine the noise mechanism. Finally, we show that the β values of Ge n-FETs are significantly different from conventional Si transistors as well as Ge p-FETs at RT and 150 K due to much higher Nit and/or μ values of the Ge n-FETs.

1.
A. K.
Aggarwal
and
M. H.
White
,
J. Appl. Phys.
55
,
3682
(
1984
).
2.
D.
Kuzum
,
A. J.
Pethe
,
T.
Krishnamohan
, and
K. C.
Saraswat
,
IEEE Trans. Electron Devices
56
,
648
(
2009
).
3.
K.
Martens
,
C. O.
Chui
,
G.
Brammertz
,
B.
De Jaeger
,
D.
Kuzum
,
M.
Meuris
,
M.
Heyns
,
T.
Krishnamohan
,
K.
Saraswat
,
H. E.
Maes
, and
G.
Groeseneken
,
IEEE Trans. Electron Devices
55
,
547
(
2008
).
4.
S.
Kothari
,
C.
Joishi
,
S.
Ghosh
,
D.
Biswas
,
D.
Vaidya
,
S.
Ganguly
, and
S.
Lodha
,
Appl. Phys. Express
9
,
071302
(
2016
).
5.
S.
Takagi
,
A.
Toriumi
,
M.
Iwase
, and
H.
Tango
,
IEEE Trans. Electron Devices
41
,
2357
(
1994
).
6.
S.
Potbhare
, in
Proceedings of the SISPAD
(
2005
), p.
95
.
7.
W.-C.
Shih
, “
Device simulation of density of interface states of temperature dependent carrier concentration in 4H-SiC MOSFETs
,” M.S. thesis,
Auburn University
,
2014
.
8.
Y.
Hu
,
S.
Li
,
G.
Jiao
,
Y. Q.
Wu
,
D.
Huang
,
P. D.
Ye
, and
M.-F.
Li
,
IEEE Trans. Nanotechnol.
12
,
806
(
2013
).
9.
K.
Chain
,
J.-H.
Huang
,
J.
Duster
,
P. K.
Ko
, and
C.
Hu
,
Semicond. Sci. Technol.
12
(
4
),
355
(
1997
).
10.
G.
Roll
,
Leakage Current and Defect Characterization of Short Channel MOSFETs
(
Logos Verlag
,
Berlin
,
2012
).
11.
M.
Musolino
,
D.
van Treeck
,
A.
Tahraoui
,
L.
Scarparo
,
C.
De Santi
,
M.
Meneghini
,
E.
Zanoni
,
L.
Geelhaar
, and
H.
Riechert
,
AIP J. Appl. Phys.
119
,
044502
(
2016
).
12.
D.
Kuzum
,
T.
Krishnamohan
,
A. J.
Pethe
,
A. K.
Okyay
,
Y.
Oshima
,
Y.
Sun
,
J. P.
McVittie
,
P. A.
Pianetta
,
P. C.
McIntyre
, and
K. C.
Saraswat
,
IEEE Electron Device Lett.
29
,
328
330
(
2008
).
13.
K.
Martens
,
B.
Kaczer
,
T.
Grasser
,
B.
De Jaeger
,
M.
Meuris
,
H. E.
Maes
, and
G.
Groeseneken
,
IEEE Electron Device Lett.
29
,
1364
(
2008
).
14.
W.
Fang
,
E.
Simoen
,
H.
Arimura
,
J.
Mitard
,
S.
Sioncke
,
H.
Mertens
,
A.
Mocuta
,
N.
Collaert
,
J.
Luo
,
C.
Zhao
,
A. V.-Y.
Thean
, and
C.
Claeys
,
IEEE Trans. Electron Devices
62
,
2078
(
2015
).
15.
W.
Goes
,
M.
Waltl
,
Y.
Wimmer
,
G.
Rzepa
, and
T.
Grasser
, in
Proceedings of the SISPAD
(
2014
), p.
77
.
16.
N. A.
Chowdhury
and
D.
Misra
,
J. Electrochem. Soc.
154
,
G30
(
2007
).
17.
J.
Koomen
,
Solid State Electron.
16
,
801
(
1973
).
18.
K. K.
Hung
,
P. K.
Ko
,
C.
Hu
, and
Y. C.
Cheng
,
IEEE Trans. Electron Devices
37
,
654
(
1990
).
19.
P.
Magnone
,
F.
Crupi
,
G.
Giusi
,
C.
Pace
,
E.
Simoen
,
C.
Claeys
,
L.
Pantisano
,
D.
Maji
,
V. R.
Rao
, and
P.
Srinivasan
,
IEEE Trans. Device Mater. Reliab.
9
,
180
(
2009
).
20.
P.
Bhatt
,
K.
Chaudhuri
,
S.
Kothari
,
A.
Nainani
, and
S.
Lodha
,
Appl. Phys. Lett.
103
,
172107
(
2013
).
21.
A.
Ray
,
R.
Nori
,
P.
Bhatt
,
S.
Lodha
,
R.
Pinto
,
V. R.
Rao
,
F.
Jomard
, and
M.
Neumann-Spallart
,
J. Vac. Sci. Technol., A
32
,
061302
(
2014
).
22.
G.
Kapila
,
N.
Goyal
,
V. D.
Maheta
,
C.
Olsen
,
K.
Ahmed
, and
S.
Mahapatra
, in
Proceedings of the IEDM
(
2008
), p.
1
.
23.
T. H.
Ning
and
C. T.
Sah
,
Phys. Rev. B
6
,
4605
(
1972
).
24.
P.
Magnone
,
C.
Pace
,
F.
Crupi
, and
G.
Giusi
,
Microelectron. Reliab.
47
,
2109
(
2007
).
25.
N. K.
Rajan
,
D. A.
Routenberg
,
J.
Chen
, and
M. A.
Reed
,
Appl. Phys. Lett.
97
,
243501
(
2010
).
You do not currently have access to this content.