We investigated the bending of single-walled carbon nanotubes (SWNTs) in bottom-contact SWNT devices using Raman mapping measurements. The height difference between the metal electrodes and the substrate caused the SWNTs to bend, down-shifting the and bands of the bent SWNTs. No shifting of the and bands was observed when flat electrodes were used. Shifting of the and bands in SWNTs is strongly correlated to modulation of the Fermi level. We confirmed this effect by measuring the transport properties of the SWNT devices, which were in good agreement with the Raman measurement results.
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