The effect of germanium (Ge) on n-type 4H-SiC is experimentally studied by electrical characterization of homoepitaxial layers grown by chemical vapor deposition (CVD). Measurements show that electrical properties of epitaxial layers can be changed by intentional incorporation of germane (GeH4) gas during the deposition process. On the nanoscale, two-dimensional mappings acquired with conductive atomic force microscopy show preferential conductive paths on the surface of Ge-doped samples, which are related to the presence of this isoelectronic impurity. Hall effect measurements confirm that also macroscopic electrical properties of n-type 4H-SiC are improved due to incorporation of Ge into SiC during CVD growth. In particular, despite equal free electron concentration, enhanced mobility in a wide temperature range is measured in Ge-doped samples as compared to a pure 4H-SiC layer. Based on our results from Hall effect measurements as well as admittance spectroscopy and deep level transient spectroscopy, it is speculated that Ge influences the generation and annealing of other point defects and thus helps to reduce the total concentration of defects.
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28 November 2016
Research Article|
November 22 2016
Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition
T. Sledziewski;
T. Sledziewski
1Lehrstuhl für Angewandte Physik, Department Physik,
FAU Erlangen-Nürnberg
, Staudtstrasse 7/A3, D-91058 Erlangen, Germany
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M. Vivona;
M. Vivona
2
CNR-IMM
, Strada VIII, n. 5 - Zona Industriale, 95121 Catania, Italy
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K. Alassaad;
K. Alassaad
3
Laboratoire des Multimatériaux et Interfaces
, UMR-CNRS 5615, Université Claude Bernard Lyon 1, Université de Lyon
, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France
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P. Kwasnicki;
P. Kwasnicki
4
Laboratoire Charles Coulomb (L2C)
, UMR 5221 CNRS-Université de Montpellier, 34095 Montpellier, Cedex 5, France
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R. Arvinte;
R. Arvinte
5
NOVASiC
, Savoie Technolac, Arche Bat 4, BP 267, 73375 Le Bourget du Lac Cedex, France
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S. Beljakowa;
S. Beljakowa
1Lehrstuhl für Angewandte Physik, Department Physik,
FAU Erlangen-Nürnberg
, Staudtstrasse 7/A3, D-91058 Erlangen, Germany
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H. B. Weber;
H. B. Weber
1Lehrstuhl für Angewandte Physik, Department Physik,
FAU Erlangen-Nürnberg
, Staudtstrasse 7/A3, D-91058 Erlangen, Germany
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F. Giannazzo
;
F. Giannazzo
2
CNR-IMM
, Strada VIII, n. 5 - Zona Industriale, 95121 Catania, Italy
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H. Peyre;
H. Peyre
4
Laboratoire Charles Coulomb (L2C)
, UMR 5221 CNRS-Université de Montpellier, 34095 Montpellier, Cedex 5, France
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V. Souliere;
V. Souliere
3
Laboratoire des Multimatériaux et Interfaces
, UMR-CNRS 5615, Université Claude Bernard Lyon 1, Université de Lyon
, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France
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T. Chassagne
;
T. Chassagne
5
NOVASiC
, Savoie Technolac, Arche Bat 4, BP 267, 73375 Le Bourget du Lac Cedex, France
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M. Zielinski;
M. Zielinski
5
NOVASiC
, Savoie Technolac, Arche Bat 4, BP 267, 73375 Le Bourget du Lac Cedex, France
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S. Juillaguet;
S. Juillaguet
4
Laboratoire Charles Coulomb (L2C)
, UMR 5221 CNRS-Université de Montpellier, 34095 Montpellier, Cedex 5, France
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G. Ferro;
G. Ferro
3
Laboratoire des Multimatériaux et Interfaces
, UMR-CNRS 5615, Université Claude Bernard Lyon 1, Université de Lyon
, 43 Bd du 11 nov. 1918, 69622 Villeurbanne, France
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F. Roccaforte
;
F. Roccaforte
2
CNR-IMM
, Strada VIII, n. 5 - Zona Industriale, 95121 Catania, Italy
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M. Krieger
M. Krieger
a)
1Lehrstuhl für Angewandte Physik, Department Physik,
FAU Erlangen-Nürnberg
, Staudtstrasse 7/A3, D-91058 Erlangen, Germany
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J. Appl. Phys. 120, 205701 (2016)
Article history
Received:
August 15 2016
Accepted:
October 25 2016
Citation
T. Sledziewski, M. Vivona, K. Alassaad, P. Kwasnicki, R. Arvinte, S. Beljakowa, H. B. Weber, F. Giannazzo, H. Peyre, V. Souliere, T. Chassagne, M. Zielinski, S. Juillaguet, G. Ferro, F. Roccaforte, M. Krieger; Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition. J. Appl. Phys. 28 November 2016; 120 (20): 205701. https://doi.org/10.1063/1.4967301
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