Localization and interaction effects of epitaxial Bi₂Se₃ bulk states in two-dimensional limit

Quantum interference effects and electron-electron interactions are found to play an important role in two-dimensional (2D) bulk transport of topological insulator (TI) thin films, which were previously considered as 2D electron gas (2DEG) and explained on basis of Hikami-Larkin-Nagaoka formula and Lee-Ramakrishnan theory. The distinct massive Dirac-type band structure of the TI bulk state gives rise to quantum corrections to conductivity due to interference and interaction effects, which are quite different from that of a 2DEG. We interpret the experimental findings employing Lu-Shen theory particularly derived for the TI system in the 2D limit. The surface and the bulk conductions are identified based on slopes of logarithmic temperature-dependent conductivities with magnetic fields. The perpendicular field magnetoresistance is analyzed considering suppression of weak antilocalization/localization of the surface/bulk electrons by the applied field. We propose corresponding theoretical models to explain the parallel and tilted field magnetoresistance. The effect of the band structure is found to be crucial for an accurate explanation of the magnetotransport results in the TI thin film.