Organic photovoltaics (OPVs) with three types of double anode buffer layers (DABLs), i.e., 4.5 nm hole-transport material 4,4-bis[N-(1-naphthyl)-N-phenyl-amino]biphenyl layer, 1 nm electron-transport material Bphen, and 1 nm typical insulator LiF layer, respectively, deposited onto 10 nm MoO3 layer, were fabricated. All these three DABLs can improve the efficiency of CuPc/C60 based planar heterojunction OPV, especially with about 10% enhancement of short-circuit current (ISC). Based on the external quantum efficiency (EQE) and transient photovoltage (TPV) measurements, a mechanism of depressing harmful exciton dissociation at the MoO3/CuPc interface has been proposed. This harmful dissociation results in exciton loss within the CuPc layer, while a proper ultrathin layer inserted at MoO3/CuPc interface can effectively depress the dissociation and thus improve the total photocurrent.
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14 October 2016
Research Article|
October 13 2016
Experimental evidence of harmful exciton dissociation at MoO3/CuPc interface in OPV
A. R. Yu;
A. R. Yu
State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Collaborative Innovation Center of Advanced Microstructures,
Fudan University
, Shanghai 200433, China
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R. C. Yi;
R. C. Yi
State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Collaborative Innovation Center of Advanced Microstructures,
Fudan University
, Shanghai 200433, China
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J. W. Zhang;
J. W. Zhang
State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Collaborative Innovation Center of Advanced Microstructures,
Fudan University
, Shanghai 200433, China
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J. J. Qin;
J. J. Qin
State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Collaborative Innovation Center of Advanced Microstructures,
Fudan University
, Shanghai 200433, China
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H. M. Yu;
H. M. Yu
State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Collaborative Innovation Center of Advanced Microstructures,
Fudan University
, Shanghai 200433, China
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Y. J. Tang;
Y. J. Tang
State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Collaborative Innovation Center of Advanced Microstructures,
Fudan University
, Shanghai 200433, China
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R. C. Shi;
R. C. Shi
State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Collaborative Innovation Center of Advanced Microstructures,
Fudan University
, Shanghai 200433, China
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Author to whom correspondence should be addressed. Electronic mail: [email protected]. Tel/Fax: +86 21 65103617.
J. Appl. Phys. 120, 145501 (2016)
Article history
Received:
May 25 2016
Accepted:
September 30 2016
Citation
A. R. Yu, R. C. Yi, J. W. Zhang, J. J. Qin, H. M. Yu, Y. J. Tang, R. C. Shi, X. Y. Hou; Experimental evidence of harmful exciton dissociation at MoO3/CuPc interface in OPV. J. Appl. Phys. 14 October 2016; 120 (14): 145501. https://doi.org/10.1063/1.4964748
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