Although the diffusion control and dopant activation of Ge p-type junctions are straightforward when using B+ implantation, the use of the heavier BF2+ ions or even BF+ is still favored in terms of shallow junction formation and throughput—because implants can be done at higher energies, which can give higher beam currents and beam stability—and thus the understanding of the effect of F co-doping becomes important. In this work, we have investigated diffusion and end-of-range (EOR) defect formation for B+, BF+, and BF2+ implants in crystalline and pre-amorphized Ge, employing rapid thermal annealing at 600 °C and 800 °C for 10 s. It is demonstrated that the diffusion of B is strongly influenced by the temperature, the presence of F, and the depth of amorphous/crystalline interface. The B and F diffusion profiles suggest the formation of B–F complexes and enhanced diffusion by interaction with point defects. In addition, the strong chemical effect of F is found only for B in Ge, while such an effect is vanishingly small for samples implanted with F alone, or co-implanted with P and F, as evidenced by the high residual F concentration in the B-doped samples after annealing. After 600 °C annealing for 10 s, interstitial-induced compressive strain was still observed in the EOR region for the sample implanted with BF+, as measured by X-ray diffraction. Further analysis by cross-sectional transmission electron microscopy showed that the {311} interstitial clusters are the majority type of EOR defects. The impact of these {311} defects on the electrical performance of Ge p+/n junctions formed by BF+ implantation was evaluated.
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7 July 2016
Research Article|
July 05 2016
Diffusion and recrystallization of B implanted in crystalline and pre-amorphized Ge in the presence of F
William Hsu;
William Hsu
a)
1Department of Electrical and Computer Engineering and Microelectronics Research Center,
The University of Texas at Austin
, Austin, Texas 78758, USA
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Taegon Kim
;
Taegon Kim
1Department of Electrical and Computer Engineering and Microelectronics Research Center,
The University of Texas at Austin
, Austin, Texas 78758, USA
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Alfredo Benítez-Lara;
Alfredo Benítez-Lara
2Department of Physics and Astronomy,
The University of Texas at San Antonio
, San Antonio, Texas 78249, USA
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Harry Chou;
Harry Chou
1Department of Electrical and Computer Engineering and Microelectronics Research Center,
The University of Texas at Austin
, Austin, Texas 78758, USA
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Andrei Dolocan;
Andrei Dolocan
3Texas Materials Institute,
The University of Texas at Austin
, Austin, Texas 78712, USA
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Amritesh Rai;
Amritesh Rai
1Department of Electrical and Computer Engineering and Microelectronics Research Center,
The University of Texas at Austin
, Austin, Texas 78758, USA
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M. Josefina Arellano-Jiménez;
M. Josefina Arellano-Jiménez
2Department of Physics and Astronomy,
The University of Texas at San Antonio
, San Antonio, Texas 78249, USA
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Marylene Palard;
Marylene Palard
1Department of Electrical and Computer Engineering and Microelectronics Research Center,
The University of Texas at Austin
, Austin, Texas 78758, USA
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Miguel José-Yacamán;
Miguel José-Yacamán
2Department of Physics and Astronomy,
The University of Texas at San Antonio
, San Antonio, Texas 78249, USA
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Sanjay K. Banerjee
Sanjay K. Banerjee
1Department of Electrical and Computer Engineering and Microelectronics Research Center,
The University of Texas at Austin
, Austin, Texas 78758, USA
3Texas Materials Institute,
The University of Texas at Austin
, Austin, Texas 78712, USA
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a)
Electronic mail: william.hsu@utexas.edu
J. Appl. Phys. 120, 015701 (2016)
Article history
Received:
May 10 2016
Accepted:
June 23 2016
Citation
William Hsu, Taegon Kim, Alfredo Benítez-Lara, Harry Chou, Andrei Dolocan, Amritesh Rai, M. Josefina Arellano-Jiménez, Marylene Palard, Miguel José-Yacamán, Sanjay K. Banerjee; Diffusion and recrystallization of B implanted in crystalline and pre-amorphized Ge in the presence of F. J. Appl. Phys. 7 July 2016; 120 (1): 015701. https://doi.org/10.1063/1.4955312
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