Monolithic integration of III-V compounds into high density Si integrated circuits is a key technological challenge for the next generation of optoelectronic devices. In this work, we report on the metal organic vapor phase epitaxy growth of strain-free GaAs crystals on Si substrates patterned down to the micron scale. The differences in thermal expansion coefficient and lattice parameter are adapted by a 2-μm-thick intermediate Ge layer grown by low-energy plasma enhanced chemical vapor deposition. The GaAs crystals evolve during growth towards a pyramidal shape, with lateral facets composed of {111} planes and an apex formed by {137} and (001) surfaces. The influence of the anisotropic GaAs growth kinetics on the final morphology is highlighted by means of scanning and transmission electron microscopy measurements. The effect of the Si pattern geometry, substrate orientation, and crystal aspect ratio on the GaAs structural properties was investigated by means of high resolution X-ray diffraction. The thermal strain relaxation process of GaAs crystals with different aspect ratio is discussed within the framework of linear elasticity theory by Finite Element Method simulations based on realistic geometries extracted from cross-sectional scanning electron microscopy images.
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7 February 2016
Research Article|
February 02 2016
GaAs/Ge crystals grown on Si substrates patterned down to the micron scale
A. G. Taboada;
A. G. Taboada
a)
1
Laboratory for Solid State Physics
, ETH Zürich, Otto-Stern-Weg. 1, CH-8093 Zürich, Switzerland
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M. Meduňa;
M. Meduňa
2Department of Condensed Matter Physics,
Masaryk University
, Kotlářská 2, CZ-61137 Brno, Czech Republic
3
CEITEC
, Masaryk University Kamenice 5, CZ-60177 Brno, Czech Republic
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M. Salvalaglio;
M. Salvalaglio
4L-NESS, Department of Materials Science,
Università di Milano-Bicocca
, Via R. Cozzi 55, I-20125 Milano, Italy
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F. Isa;
F. Isa
1
Laboratory for Solid State Physics
, ETH Zürich, Otto-Stern-Weg. 1, CH-8093 Zürich, Switzerland
5L-NESS and Department of Physics,
Politecnico di Milano
, via Anzani 42, I-22100 Como, Italy
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T. Kreiliger;
T. Kreiliger
1
Laboratory for Solid State Physics
, ETH Zürich, Otto-Stern-Weg. 1, CH-8093 Zürich, Switzerland
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C. V. Falub;
C. V. Falub
b)
1
Laboratory for Solid State Physics
, ETH Zürich, Otto-Stern-Weg. 1, CH-8093 Zürich, Switzerland
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E. Barthazy Meier;
E. Barthazy Meier
6Scientific Center for Optical and Electron Microscopy (ScopeM),
ETH Zürich
, Auguste-Piccard-Hof 1, CH-8093 Zürich, Switzerland
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E. Müller;
E. Müller
6Scientific Center for Optical and Electron Microscopy (ScopeM),
ETH Zürich
, Auguste-Piccard-Hof 1, CH-8093 Zürich, Switzerland
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L. Miglio;
L. Miglio
4L-NESS, Department of Materials Science,
Università di Milano-Bicocca
, Via R. Cozzi 55, I-20125 Milano, Italy
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G. Isella;
G. Isella
5L-NESS and Department of Physics,
Politecnico di Milano
, via Anzani 42, I-22100 Como, Italy
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H. von Känel
H. von Känel
1
Laboratory for Solid State Physics
, ETH Zürich, Otto-Stern-Weg. 1, CH-8093 Zürich, Switzerland
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a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]. Present address: Camlin Technologies CH, Technoparkstrasse 1, 8005 Zürich, Switzerland.
b)
Present address: Evatec AG, Hauptstrasse 1a, CH-9477 Trübbach, Switzerland.
J. Appl. Phys. 119, 055301 (2016)
Article history
Received:
September 08 2015
Accepted:
January 09 2016
Citation
A. G. Taboada, M. Meduňa, M. Salvalaglio, F. Isa, T. Kreiliger, C. V. Falub, E. Barthazy Meier, E. Müller, L. Miglio, G. Isella, H. von Känel; GaAs/Ge crystals grown on Si substrates patterned down to the micron scale. J. Appl. Phys. 7 February 2016; 119 (5): 055301. https://doi.org/10.1063/1.4940379
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