Zn3N2 has been reported to have high electron mobility even in polycrystalline films. The high mobility in polycrystalline films is a striking feature as compared with group-III nitrides. However, the origins of the high mobility have not been elucidated to date. In this paper, we discuss the reason for high mobility in Zn3N2. We grew epitaxial and polycrystalline films of Zn3N2. Electron effective mass (m*) was determined optically and found to decrease with a decrease in electron density. Using a nonparabolic conduction band model, the m* at the bottom of the conduction band was derived to be (0.08 ± 0.03)m0 (m0 denotes the free electron mass), which is comparable to that in InN. Optically determined intra-grain mobility (μopt) in the polycrystalline films was higher than 110 cm2 V−1 s−1, resulting from the small m*. The Hall mobility (μH) in the polycrystalline films was significantly smaller than μopt, indicating that electron transport is impeded by scattering at the grain boundaries. Nevertheless, μH higher than 70 cm2 V−1 s−1 was achievable owing to the beneficial effect of the high μopt. As for the epitaxial films, we revealed that electron transport is hardly affected by grain boundary scattering and is governed solely by ionized impurity scattering. The findings in this study suggest that Zn3N2 is a high-mobility semiconductor with small effective mass.
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