Operation of a 5 kW-class Hall current Thruster for various voltages from 400 V to 800 V and a xenon mass flow rate of 6 mg s−1 have been studied with a quasi-neutral hybrid model. In this model, anomalous electron transport is fitted from ion mean velocity measurements, and energy losses due to electron–wall interactions are used as a tuned parameter to match expected electron temperature strength for same class of thruster. Doubly charged ions production has been taken into account and detailed collisions between heavy species included. As the electron temperature increases, the main channel of Xe2+ ion production becomes stepwise ionization of Xe+ ions. For an applied voltage of 800 V, the mass utilization efficiency is in the range of 0.8–1.1, and the current fraction of doubly charged ions varies between 0.1 and 0.2. Results show that the region of ion production of each species is located at the same place inside the thruster channel. Because collision processes mean free path is larger than the acceleration region, each type of ions experiences same potential drop, and ion energy distributions of singly and doubly charged are very similar.
Skip Nav Destination
Article navigation
28 April 2016
Research Article|
April 29 2016
Ion properties in a Hall current thruster operating at high voltage
L. Garrigues
L. Garrigues
a)
LAPLACE,
Université de Toulouse
, CNRS, INPT, UPS, France
Search for other works by this author on:
J. Appl. Phys. 119, 163305 (2016)
Article history
Received:
February 03 2016
Accepted:
April 13 2016
Citation
L. Garrigues; Ion properties in a Hall current thruster operating at high voltage. J. Appl. Phys. 28 April 2016; 119 (16): 163305. https://doi.org/10.1063/1.4947523
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini, Carlo De Santi, et al.
Celebrating notable advances in compound semiconductors: A tribute to Dr. Wladyslaw Walukiewicz
Kirstin Alberi, Junqiao Wu, et al.