Complementary studies of atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements are carried out in order to unravel the influence of C-doping of GaN on the vertical leakage current of AlN/AlGaN/GaN:C heterostructures. A systematic increment of the vertical blocking voltage at a given current density is observed in the structures, when moving from the nominally undoped conditions—corresponding to a residual C-background of ∼1017 cm−3—to a C-content of ∼1019 cm−3 in the GaN layer. The value of the vertical blocking voltage saturates for C concentrations higher than ∼1019 cm−3. Atom probe tomography confirms the homogeneity of the GaN:C layers, demonstrating that there is no clustering at C-concentrations as high as 1020 cm−3. It is inferred that the vertical blocking voltage saturation is not likely to be related to C-clustering.
Skip Nav Destination
Article navigation
28 March 2016
Research Article|
March 22 2016
Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements
Martin Huber
;
Martin Huber
a)
1
Infineon Technologies Austria AG
, Siemensstrasse 2, A-9500 Villach, Austria
and Institute of Semiconductor and Solid State Physics, Johannes Kepler University
, Altenbergerstrasse 69, A-4040 Linz, Austria
Search for other works by this author on:
Ingo Daumiller;
Ingo Daumiller
2
Infineon Technologies Austria AG
, Siemensstrasse 2, A-9500 Villach, Austria
Search for other works by this author on:
Andrei Andreev
;
Andrei Andreev
2
Infineon Technologies Austria AG
, Siemensstrasse 2, A-9500 Villach, Austria
Search for other works by this author on:
Marco Silvestri;
Marco Silvestri
2
Infineon Technologies Austria AG
, Siemensstrasse 2, A-9500 Villach, Austria
Search for other works by this author on:
Lauri Knuuttila;
Lauri Knuuttila
2
Infineon Technologies Austria AG
, Siemensstrasse 2, A-9500 Villach, Austria
Search for other works by this author on:
Anders Lundskog;
Anders Lundskog
2
Infineon Technologies Austria AG
, Siemensstrasse 2, A-9500 Villach, Austria
Search for other works by this author on:
Michael Wahl;
Michael Wahl
3
IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
, Trippstadter Strasse 120, D-67663 Kaiserslautern, Germany
Search for other works by this author on:
Michael Kopnarski;
Michael Kopnarski
3
IFOS Institut fuer Oberflaechen- und Schichtanalytik GmbH
, Trippstadter Strasse 120, D-67663 Kaiserslautern, Germany
Search for other works by this author on:
Alberta Bonanni
Alberta Bonanni
4Institute of Semiconductor and Solid State Physics,
Johannes Kepler University
, Altenbergerstrasse 69, A-4040 Linz, Austria
Search for other works by this author on:
J. Appl. Phys. 119, 125701 (2016)
Article history
Received:
December 22 2015
Accepted:
March 09 2016
Citation
Martin Huber, Ingo Daumiller, Andrei Andreev, Marco Silvestri, Lauri Knuuttila, Anders Lundskog, Michael Wahl, Michael Kopnarski, Alberta Bonanni; Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements. J. Appl. Phys. 28 March 2016; 119 (12): 125701. https://doi.org/10.1063/1.4944652
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Piezoelectric thin films and their applications in MEMS: A review
Jinpeng Liu, Hua Tan, et al.
Tutorial: Simulating modern magnetic material systems in mumax3
Jonas J. Joos, Pedram Bassirian, et al.