Being able to control grain boundaries during the phase transformation when processing a ferroelectric thin-film is crucial for the successful development of practical multibit ferroelectric memory. A novel development of ferroelectric thin-film crystallization processing for realizing epitaxial-like single crystals via artificial nucleation by Pt-seeding is reported here. Dividing the nucleation and growth mechanism by Pt-seeding, it is possible to obtain large and uniform rectangular-shaped ferroelectric grains, large enough to fabricate a field-effect transistor (FET) in the inside of the crystal grain. The fabricated ferroelectric FET, Pt/Pb(Zr,Ti)O3/ZrTiO4/Si, showed a large memory window (∼2.2 V), a low operation voltage (∼6 V), and an ultra-fast program/erase speed (∼10−6 s). Moreover, there was no degradation after 1015 cycles of bipolar fatigue testing and the sample even showed a long retention time after 1 yr. All of these characteristics correspond to the best performance among all types of ferroelectric field-effect transistors reported thus far.

At the request of the Editor-in-Chief and AIP Publishing this article is being retracted. The Journal of Applied Physics retracts the referenced article due to the duplication of figures and significant overlap with other publications by the authors, and because of concerns about the accuracy of the description of the devices and materials from which the reported results were obtained. The article is retracted from the scientific record effective 6 November 2017.

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