The structural transformations occurring in Ge2Sb2Te5 films heated at temperature up to 400 °C, and under hydrostatic pressure up to 12 GPa, have been investigated through in-situ X ray diffraction measurements. The adopted experimental conditions are close to those experienced by the phase change material during the SET (crystallization)/RESET (amorphization) processes in a nonvolatile memory device. The compression enhances the thermal stability of the amorphous phase, which remains stable up to 180 °C at 8 GPa and to 230 °C at 12 GPa. The structure of the crystalline phases is also modified, with the formation of a CsCl-type structure instead of rock-salt and of a GeS-type structure at the temperature at which usually the trigonal stable phase is formed. Overall, the stability of the stable phase appears to be more affected by the compression. We argue that the presence of weak bonds associated to the van der Waals gaps is a determining factor for the observed reduced stability.
Skip Nav Destination
Article navigation
14 August 2015
Research Article|
August 14 2015
Structural transformations in Ge2Sb2Te5 under high pressure and temperature
A. M. Mio;
A. M. Mio
1IMM-CNR,
Istituto per la Microelettronica e Microsistemi
, Consiglio Nazionale delle Ricerche, Strada VIII 5, Zona Industriale, I-95121 Catania, Italy
Search for other works by this author on:
S. Privitera;
1IMM-CNR,
Istituto per la Microelettronica e Microsistemi
, Consiglio Nazionale delle Ricerche, Strada VIII 5, Zona Industriale, I-95121 Catania, Italy
Search for other works by this author on:
G. D'Arrigo;
G. D'Arrigo
1IMM-CNR,
Istituto per la Microelettronica e Microsistemi
, Consiglio Nazionale delle Ricerche, Strada VIII 5, Zona Industriale, I-95121 Catania, Italy
Search for other works by this author on:
M. Ceppatelli;
M. Ceppatelli
2ICCOM-CNR,
Istituto di Chimica dei Composti OrganoMetallici
, Via Madonna del Piano 10, I-50019 Sesto Fiorentino (FI), Italy
3LENS,
European Laboratory for Non-Linear Spectroscopy
, Via Nello Carrara 1, I-50019 Sesto Fiorentino (FI), Italy
Search for other works by this author on:
F. Gorelli;
F. Gorelli
3LENS,
European Laboratory for Non-Linear Spectroscopy
, Via Nello Carrara 1, I-50019 Sesto Fiorentino (FI), Italy
4INO-CNR,
Istituto Nazionale di Ottica
, Via Nello Carrara 1, I-50019 Sesto Fiorentino (FI), Italy
Search for other works by this author on:
M. Santoro;
M. Santoro
3LENS,
European Laboratory for Non-Linear Spectroscopy
, Via Nello Carrara 1, I-50019 Sesto Fiorentino (FI), Italy
4INO-CNR,
Istituto Nazionale di Ottica
, Via Nello Carrara 1, I-50019 Sesto Fiorentino (FI), Italy
Search for other works by this author on:
M. Miritello;
M. Miritello
5
MATIS-IMM-CNR
, via S. Sofia 64, I-95123 Catania, Italy
Search for other works by this author on:
R. Bini;
R. Bini
3LENS,
European Laboratory for Non-Linear Spectroscopy
, Via Nello Carrara 1, I-50019 Sesto Fiorentino (FI), Italy
6
Università degli Studi di Firenze
, Via della Lastruccia 3, I-50019 Sesto Fiorentino (FI), Italy
Search for other works by this author on:
E. Rimini
E. Rimini
1IMM-CNR,
Istituto per la Microelettronica e Microsistemi
, Consiglio Nazionale delle Ricerche, Strada VIII 5, Zona Industriale, I-95121 Catania, Italy
Search for other works by this author on:
a)
Electronic mail: stefania.privitera@imm.cnr.it
J. Appl. Phys. 118, 064503 (2015)
Article history
Received:
March 05 2015
Accepted:
August 01 2015
Citation
A. M. Mio, S. Privitera, G. D'Arrigo, M. Ceppatelli, F. Gorelli, M. Santoro, M. Miritello, R. Bini, E. Rimini; Structural transformations in Ge2Sb2Te5 under high pressure and temperature. J. Appl. Phys. 14 August 2015; 118 (6): 064503. https://doi.org/10.1063/1.4928561
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
Impulse coupling enhancement of aluminum targets under laser irradiation in a soft polymer confined geometry
C. Le Bras, E. Lescoute, et al.
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini, Carlo De Santi, et al.
Related Content
Direct hexagonal transition of amorphous (Ge2Sb2Te5)0.9Se0.1 thin films
Appl. Phys. Lett. (February 2014)
First-principles study of the properties for crystal Ge2Sb2Te5 with Ge vacancy
AIP Advances (June 2018)
Multi-level phase change memory devices with Ge2Sb2Te5 layers separated by a thermal insulating Ta2O5 barrier layer
J. Appl. Phys. (December 2011)
Structural, dynamical, and electronic properties of transition metal-doped Ge2Sb2Te5 phase-change materials simulated by ab initio molecular dynamics
Appl. Phys. Lett. (July 2012)
In situ investigation of ion irradiation-induced amorphization of (Ge2Sb2Te5)1−xCx [0 ≤ x ≤ 0.12]
J. Appl. Phys. (April 2023)