Recent photoluminescence experiments presented by M. Binder et al. [Appl. Phys. Lett. 103, 071108 (2013)] demonstrated the visualization of high-energy carriers generated by Auger recombination in (AlInGa)N multi quantum wells. Two fundamental limitations were deduced which reduce the detection efficiency of Auger processes contributing to the reduction in internal quantum efficiency: the transfer probability of these hot electrons and holes in a detection well and the asymmetry in type of Auger recombination. We investigate the transport and capture properties of these high-energy carriers regarding polarization fields, the transfer distance to the generating well, and the number of detection wells. All three factors are shown to have a noticeable impact on the detection of these hot particles. Furthermore, the investigations support the finding that electron-electron-hole exceeds electron-hole-hole Auger recombination if the densities of both carrier types are similar. Overall, the results add to the evidence that Auger processes play an important role in the reduction of efficiency in (AlInGa)N based LEDs.
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21 July 2015
Research Article|
July 21 2015
Transport and capture properties of Auger-generated high-energy carriers in (AlInGa)N quantum well structures
A. Nirschl;
A. Nirschl
a)
1
OSRAM Opto Semiconductors GmbH
, Leibnizstraße 4, 93055 Regensburg, Germany
2Institut für Experimentelle und Angewandte Physik,
Universität Regensburg
, Universitätsstraße 31, 93040 Regensburg, Germany
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M. Binder;
M. Binder
1
OSRAM Opto Semiconductors GmbH
, Leibnizstraße 4, 93055 Regensburg, Germany
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M. Schmid;
M. Schmid
1
OSRAM Opto Semiconductors GmbH
, Leibnizstraße 4, 93055 Regensburg, Germany
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M. M. Karow
;
M. M. Karow
b)
1
OSRAM Opto Semiconductors GmbH
, Leibnizstraße 4, 93055 Regensburg, Germany
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I. Pietzonka;
I. Pietzonka
1
OSRAM Opto Semiconductors GmbH
, Leibnizstraße 4, 93055 Regensburg, Germany
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H.-J. Lugauer;
H.-J. Lugauer
1
OSRAM Opto Semiconductors GmbH
, Leibnizstraße 4, 93055 Regensburg, Germany
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R. Zeisel;
R. Zeisel
1
OSRAM Opto Semiconductors GmbH
, Leibnizstraße 4, 93055 Regensburg, Germany
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M. Sabathil;
M. Sabathil
1
OSRAM Opto Semiconductors GmbH
, Leibnizstraße 4, 93055 Regensburg, Germany
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D. Bougeard;
D. Bougeard
2Institut für Experimentelle und Angewandte Physik,
Universität Regensburg
, Universitätsstraße 31, 93040 Regensburg, Germany
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B. Galler
B. Galler
1
OSRAM Opto Semiconductors GmbH
, Leibnizstraße 4, 93055 Regensburg, Germany
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a)
Electronic mail: Anna.Nirschl@osram-os.com
b)
Present address: Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstraße 36, 10623 Berlin, Germany.
J. Appl. Phys. 118, 033103 (2015)
Article history
Received:
February 27 2015
Accepted:
July 09 2015
Citation
A. Nirschl, M. Binder, M. Schmid, M. M. Karow, I. Pietzonka, H.-J. Lugauer, R. Zeisel, M. Sabathil, D. Bougeard, B. Galler; Transport and capture properties of Auger-generated high-energy carriers in (AlInGa)N quantum well structures. J. Appl. Phys. 21 July 2015; 118 (3): 033103. https://doi.org/10.1063/1.4927154
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