Reducing the electronic contact resistance at the interfaces of nanostructured materials is a major goal for many kinds of planar and three dimensional devices. In this work, we develop a method to enhance the electronic transport at rough interfaces by inserting a two dimensional flexible and conductive graphene sheet. We observe that an ultra-thin graphene layer with a thickness of 0.35 nm can remarkably reduce the roughness of a sample in a factor of 40%, avoiding the use of thick coatings, leading to a more homogeneous current flow, and extraordinarily increasing the total current compared to the graphene-free counterpart. Due to its simplicity and performance enhancement, this methodology can be of interest to many interface and device designers.
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7 December 2015
Research Article|
December 02 2015
Improvement of the electrical contact resistance at rough interfaces using two dimensional materials
Jianchen Hu;
Jianchen Hu
a)
1Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nanoscience and Technology,
Soochow University
, 199 Ren-Ai Road, Suzhou 215123, China
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Chengbin Pan
;
Chengbin Pan
a)
1Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nanoscience and Technology,
Soochow University
, 199 Ren-Ai Road, Suzhou 215123, China
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Heng Li;
Heng Li
2State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science,
College of Engineering, Peking University
, Beijing 100871, China
3CAPT, HEDPS and IFSA Collaborative Innovation Center of MoE,
Peking University
, Beijing 100871, P.R. China
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Panpan Shen;
Panpan Shen
4State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, CAPT, College of Engineering,
Peking University
, Beijing 100871, China
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Hui Sun;
Hui Sun
4State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, CAPT, College of Engineering,
Peking University
, Beijing 100871, China
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Huiling Duan
;
Huiling Duan
4State Key Laboratory for Turbulence and Complex System, Department of Mechanics and Engineering Science, CAPT, College of Engineering,
Peking University
, Beijing 100871, China
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Mario Lanza
Mario Lanza
b)
1Institute of Functional Nano & Soft Materials (FUNSOM), Collaborative Innovation Center of Suzhou Nanoscience and Technology,
Soochow University
, 199 Ren-Ai Road, Suzhou 215123, China
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a)
J. Hu and C. Pan contributed equally to this work.
b)
Electronic mail: mlanza@suda.edu.cn
J. Appl. Phys. 118, 215301 (2015)
Article history
Received:
April 03 2015
Accepted:
October 31 2015
Citation
Jianchen Hu, Chengbin Pan, Heng Li, Panpan Shen, Hui Sun, Huiling Duan, Mario Lanza; Improvement of the electrical contact resistance at rough interfaces using two dimensional materials. J. Appl. Phys. 7 December 2015; 118 (21): 215301. https://doi.org/10.1063/1.4936366
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