We investigate the ionization and displacement effects of an electron-beam (e-beam) on amorphous Gd2Zr2O7 synthesized by the co-precipitation and calcination methods. The as-received amorphous specimens were irradiated under electron beams at different energies (80 keV, 120 keV, and 2 MeV) and then characterized by X-ray diffraction and transmission electron microscopy. A metastable fluorite phase was observed in nanocrystalline Gd2Zr2O7 and is proposed to arise from the relatively lower surface and interface energy compared with the pyrochlore phase. Fast crystallization could be induced by 120 keV e-beam irradiation (beam current = 0.47 mA/cm2). The crystallization occurred on the nanoscale upon ionization irradiation at 400 °C after a dose of less than 1017 electrons/cm2. Under e-beam irradiation, the activation energy for the grain growth process was approximately 10 kJ/mol, but the activation energy was 135 kJ/mol by calcination in a furnace. The thermally activated ionization process was considered the fast crystallization mechanism.
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7 December 2015
Research Article|
December 02 2015
Fast crystallization of amorphous Gd2Zr2O7 induced by thermally activated electron-beam irradiation
Zhangyi Huang;
Zhangyi Huang
1College of Physical Science and Technology,
Sichuan University
, Chengdu 610064, China
2Key Laboratory of Radiation Physics and Technology of Ministry of Education,
Sichuan University
, Chengdu 610064, China
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Jianqi Qi;
Jianqi Qi
a)
1College of Physical Science and Technology,
Sichuan University
, Chengdu 610064, China
2Key Laboratory of Radiation Physics and Technology of Ministry of Education,
Sichuan University
, Chengdu 610064, China
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Li Zhou;
Li Zhou
1College of Physical Science and Technology,
Sichuan University
, Chengdu 610064, China
2Key Laboratory of Radiation Physics and Technology of Ministry of Education,
Sichuan University
, Chengdu 610064, China
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Zhao Feng;
Zhao Feng
1College of Physical Science and Technology,
Sichuan University
, Chengdu 610064, China
2Key Laboratory of Radiation Physics and Technology of Ministry of Education,
Sichuan University
, Chengdu 610064, China
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Xiaohe Yu;
Xiaohe Yu
1College of Physical Science and Technology,
Sichuan University
, Chengdu 610064, China
2Key Laboratory of Radiation Physics and Technology of Ministry of Education,
Sichuan University
, Chengdu 610064, China
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Yichao Gong;
Yichao Gong
3College of Materials Science and Engineering,
Sichuan University
, Chengdu 610064, China
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Mao Yang;
Mao Yang
1College of Physical Science and Technology,
Sichuan University
, Chengdu 610064, China
4Key Laboratory of High Energy Density Physics of Ministry of Education,
Sichuan University
, Chengdu 610064, China
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Qiwu Shi;
Qiwu Shi
1College of Physical Science and Technology,
Sichuan University
, Chengdu 610064, China
3College of Materials Science and Engineering,
Sichuan University
, Chengdu 610064, China
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Nian Wei;
Nian Wei
1College of Physical Science and Technology,
Sichuan University
, Chengdu 610064, China
4Key Laboratory of High Energy Density Physics of Ministry of Education,
Sichuan University
, Chengdu 610064, China
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Tiecheng Lu
Tiecheng Lu
b)
1College of Physical Science and Technology,
Sichuan University
, Chengdu 610064, China
2Key Laboratory of Radiation Physics and Technology of Ministry of Education,
Sichuan University
, Chengdu 610064, China
4Key Laboratory of High Energy Density Physics of Ministry of Education,
Sichuan University
, Chengdu 610064, China
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a)
Electronic mail: [email protected]. Tel./Fax: +86 28 85418586.
b)
Electronic mail: [email protected]. Tel./Fax: +86 28 85418586.
J. Appl. Phys. 118, 214901 (2015)
Article history
Received:
July 08 2015
Accepted:
November 17 2015
Citation
Zhangyi Huang, Jianqi Qi, Li Zhou, Zhao Feng, Xiaohe Yu, Yichao Gong, Mao Yang, Qiwu Shi, Nian Wei, Tiecheng Lu; Fast crystallization of amorphous Gd2Zr2O7 induced by thermally activated electron-beam irradiation. J. Appl. Phys. 7 December 2015; 118 (21): 214901. https://doi.org/10.1063/1.4936785
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