The combination of photoemission spectroscopies, infrared and UV-VIS absorption, and electric measurements has allowed to clarify the mechanisms governing the conductivity and the electronic properties of Al-doped ZnO (AZO) films in a wide doping range. The contribution of defect-related in-gap states to conduction has been excluded in optimally doped films (around 4 at. %). The appearance of gap states at high doping, the disappearance of occupied DOS at Fermi level, and the bands evolution complete the picture of electronic structure in AZO when doped above 4 at. %. In this situation, compensating defects deplete the conduction band and increase the electronic bandgap of the material. Electrical measurements and figure of merit determination confirm the high quality of the films obtained by magnetron sputtering, and thus allow to extend their properties to AZO films in general.
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28 October 2015
Research Article|
October 23 2015
Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range Available to Purchase
Ilaria Valenti;
Ilaria Valenti
1
CNR
, Istituto Nanoscienze, S3, Via G. Campi 213/a, 41125 Modena, Italy
2Dipartimento di Scienze Fisiche, Informatiche e Matematiche,
Università di Modena e Reggio Emilia
, Via G. Campi 213/a, 41125 Modena, Italy
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Stefania Benedetti
;
Stefania Benedetti
a)
1
CNR
, Istituto Nanoscienze, S3, Via G. Campi 213/a, 41125 Modena, Italy
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Alessandro di Bona;
Alessandro di Bona
1
CNR
, Istituto Nanoscienze, S3, Via G. Campi 213/a, 41125 Modena, Italy
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Valerio Lollobrigida;
Valerio Lollobrigida
3Dipartimento di Scienze,
Università Roma Tre
, I-00146 Rome, Italy
and Dipartimento di Matematica e Fisica, Università Roma Tre
, I-00146 Rome, Italy
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Andrea Perucchi
;
Andrea Perucchi
4
INSTM Udr Trieste-ST and Elettra-Sincrotrone Trieste S.C.p.A.
, Area Science Park, I-34012 Trieste, Italy
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Paola Di Pietro;
Paola Di Pietro
4
INSTM Udr Trieste-ST and Elettra-Sincrotrone Trieste S.C.p.A.
, Area Science Park, I-34012 Trieste, Italy
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Stefano Lupi;
Stefano Lupi
5CNR-IOM and Dipartimento di Fisica,
Università di Roma Sapienza
, P.le Aldo Moro 2, I-00185 Roma, Italy
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Sergio Valeri;
Sergio Valeri
1
CNR
, Istituto Nanoscienze, S3, Via G. Campi 213/a, 41125 Modena, Italy
2Dipartimento di Scienze Fisiche, Informatiche e Matematiche,
Università di Modena e Reggio Emilia
, Via G. Campi 213/a, 41125 Modena, Italy
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Piero Torelli
Piero Torelli
6
Laboratorio TASC
, IOM-CNR, S.S. 14 km 163.5, Basovizza, I-34149 Trieste, Italy
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Ilaria Valenti
1,2
Stefania Benedetti
1,a)
Alessandro di Bona
1
Valerio Lollobrigida
3
Andrea Perucchi
4
Paola Di Pietro
4
Stefano Lupi
5
Sergio Valeri
1,2
Piero Torelli
6
1
CNR
, Istituto Nanoscienze, S3, Via G. Campi 213/a, 41125 Modena, Italy
2Dipartimento di Scienze Fisiche, Informatiche e Matematiche,
Università di Modena e Reggio Emilia
, Via G. Campi 213/a, 41125 Modena, Italy
3Dipartimento di Scienze,
Università Roma Tre
, I-00146 Rome, Italy
and Dipartimento di Matematica e Fisica, Università Roma Tre
, I-00146 Rome, Italy
4
INSTM Udr Trieste-ST and Elettra-Sincrotrone Trieste S.C.p.A.
, Area Science Park, I-34012 Trieste, Italy
5CNR-IOM and Dipartimento di Fisica,
Università di Roma Sapienza
, P.le Aldo Moro 2, I-00185 Roma, Italy
6
Laboratorio TASC
, IOM-CNR, S.S. 14 km 163.5, Basovizza, I-34149 Trieste, Italy
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
J. Appl. Phys. 118, 165304 (2015)
Article history
Received:
July 23 2015
Accepted:
October 10 2015
Citation
Ilaria Valenti, Stefania Benedetti, Alessandro di Bona, Valerio Lollobrigida, Andrea Perucchi, Paola Di Pietro, Stefano Lupi, Sergio Valeri, Piero Torelli; Electrical, optical, and electronic properties of Al:ZnO films in a wide doping range. J. Appl. Phys. 28 October 2015; 118 (16): 165304. https://doi.org/10.1063/1.4934512
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